2SA75
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA75
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.125
W
Tensión colector-base (Vcb): 20
V
Corriente del colector DC máxima (Ic): 0.005
A
Temperatura operativa máxima (Tj): 75
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 12
MHz
Capacitancia de salida (Cc): 3
pF
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta:
TO44
Búsqueda de reemplazo de transistor bipolar 2SA75
2SA75
Datasheet (PDF)
0.1. Size:153K jmnic
2sa753.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA753 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1343 APPLICATIONS For 100W audio amplifier power output applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL
0.2. Size:153K jmnic
2sa757.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA757 DESCRIPTION With TO-3 package Complement to type 2SC897 APPLICATIONS For audio amplifier power output applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO
0.3. Size:155K jmnic
2sa755.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA755 DESCRIPTION With TO-220 package Complement to type 2SC1419 Note:Type 2SA754 with short pin APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum
0.4. Size:153K jmnic
2sa758.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA758 DESCRIPTION With TO-3 package Complement to type 2SC898 APPLICATIONS For 80W audio amplifier power output applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT
0.5. Size:152K jmnic
2sa756.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA756 DESCRIPTION With TO-3 package Complement to type 2SC1030 APPLICATIONS For audio amplifier power output applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNITVCB
0.6. Size:202K inchange semiconductor
2sa753.pdf
isc Silicon PNP Power Transistor 2SA753DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -110V(Min.)(BR)CEOComplement to Type 2SC1343Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for 100W audio amplifier power output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-
0.7. Size:198K inchange semiconductor
2sa757.pdf
isc Silicon PNP Power Transistor 2SA757DESCRIPTIONHigh Power Dissipation-: P = 60W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -90V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio amplifier power output stage andgeneral purpose applications.ABSOLUTE MAXIMUM RATINGS
0.8. Size:209K inchange semiconductor
2sa755.pdf
isc Silicon PNP Power Transistor 2SA755DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -1.3V(Max.) @ I = -1.5ACE(sat) CGood Linearity of hFEComplement to Type 2SC1419Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power ampli
0.9. Size:199K inchange semiconductor
2sa758.pdf
isc Silicon PNP Power Transistor 2SA758DESCRIPTIONHigh Power Dissipation-: P = 80W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -110V(Min.)(BR)CEOComplement to Type 2SC898Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio amplifier power output stage andgeneral purpose applicati
0.10. Size:206K inchange semiconductor
2sa754.pdf
isc Silicon PNP Power Transistor 2SA754DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -1.3V(Max.) @ I = -1.5ACE(sat) CGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE M
0.11. Size:202K inchange semiconductor
2sa756.pdf
isc Silicon PNP Power Transistor 2SA756DESCRIPTIONHigh Power Dissipation-: P = 50W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -80V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio amplifier power output stage andgeneral purpose applications.ABSOLUTE MAXIMUM RATINGS
Otros transistores... 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.
