2SA753
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA753
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100
W
Tensión colector-base (Vcb): 140
V
Tensión colector-emisor (Vce): 110
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 10
A
Temperatura operativa máxima (Tj): 175
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10
MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar 2SA753
2SA753
Datasheet (PDF)
..1. Size:153K jmnic
2sa753.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA753 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1343 APPLICATIONS For 100W audio amplifier power output applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL
..2. Size:202K inchange semiconductor
2sa753.pdf
isc Silicon PNP Power Transistor 2SA753DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -110V(Min.)(BR)CEOComplement to Type 2SC1343Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for 100W audio amplifier power output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-
9.1. Size:153K jmnic
2sa757.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA757 DESCRIPTION With TO-3 package Complement to type 2SC897 APPLICATIONS For audio amplifier power output applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO
9.2. Size:155K jmnic
2sa755.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA755 DESCRIPTION With TO-220 package Complement to type 2SC1419 Note:Type 2SA754 with short pin APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum
9.3. Size:153K jmnic
2sa758.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA758 DESCRIPTION With TO-3 package Complement to type 2SC898 APPLICATIONS For 80W audio amplifier power output applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT
9.4. Size:152K jmnic
2sa756.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA756 DESCRIPTION With TO-3 package Complement to type 2SC1030 APPLICATIONS For audio amplifier power output applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNITVCB
9.5. Size:198K inchange semiconductor
2sa757.pdf
isc Silicon PNP Power Transistor 2SA757DESCRIPTIONHigh Power Dissipation-: P = 60W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -90V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio amplifier power output stage andgeneral purpose applications.ABSOLUTE MAXIMUM RATINGS
9.6. Size:209K inchange semiconductor
2sa755.pdf
isc Silicon PNP Power Transistor 2SA755DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -1.3V(Max.) @ I = -1.5ACE(sat) CGood Linearity of hFEComplement to Type 2SC1419Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power ampli
9.7. Size:199K inchange semiconductor
2sa758.pdf
isc Silicon PNP Power Transistor 2SA758DESCRIPTIONHigh Power Dissipation-: P = 80W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -110V(Min.)(BR)CEOComplement to Type 2SC898Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio amplifier power output stage andgeneral purpose applicati
9.8. Size:206K inchange semiconductor
2sa754.pdf
isc Silicon PNP Power Transistor 2SA754DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -1.3V(Max.) @ I = -1.5ACE(sat) CGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE M
9.9. Size:202K inchange semiconductor
2sa756.pdf
isc Silicon PNP Power Transistor 2SA756DESCRIPTIONHigh Power Dissipation-: P = 50W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -80V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio amplifier power output stage andgeneral purpose applications.ABSOLUTE MAXIMUM RATINGS
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
