2SA755 Todos los transistores

 ..1. Size:155K  jmnic
 2sa755.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA755 DESCRIPTION With TO-220 package Complement to type 2SC1419 Note Type 2SA754 with short pin APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum

 ..2. Size:209K  inchange semiconductor
 2sa755.pdf

isc Silicon PNP Power Transistor 2SA755 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO Low Collector Saturation Voltage- V = -1.3V(Max.) @ I = -1.5A CE(sat) C Good Linearity of h FE Complement to Type 2SC1419 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power ampli

 9.1. Size:153K  jmnic
 2sa753.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA753 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1343 APPLICATIONS For 100W audio amplifier power output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL

 9.2. Size:153K  jmnic
 2sa757.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA757 DESCRIPTION With TO-3 package Complement to type 2SC897 APPLICATIONS For audio amplifier power output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO

 9.3. Size:153K  jmnic
 2sa758.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA758 DESCRIPTION With TO-3 package Complement to type 2SC898 APPLICATIONS For 80W audio amplifier power output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT

 9.4. Size:152K  jmnic
 2sa756.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA756 DESCRIPTION With TO-3 package Complement to type 2SC1030 APPLICATIONS For audio amplifier power output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCB

 9.5. Size:202K  inchange semiconductor
 2sa753.pdf

isc Silicon PNP Power Transistor 2SA753 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -110V(Min.) (BR)CEO Complement to Type 2SC1343 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for 100W audio amplifier power output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-

 9.6. Size:198K  inchange semiconductor
 2sa757.pdf

isc Silicon PNP Power Transistor 2SA757 DESCRIPTION High Power Dissipation- P = 60W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = -90V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio amplifier power output stage and general purpose applications. ABSOLUTE MAXIMUM RATINGS

 9.7. Size:199K  inchange semiconductor
 2sa758.pdf

isc Silicon PNP Power Transistor 2SA758 DESCRIPTION High Power Dissipation- P = 80W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = -110V(Min.) (BR)CEO Complement to Type 2SC898 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio amplifier power output stage and general purpose applicati

 9.8. Size:206K  inchange semiconductor
 2sa754.pdf

isc Silicon PNP Power Transistor 2SA754 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO Low Collector Saturation Voltage- V = -1.3V(Max.) @ I = -1.5A CE(sat) C Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE M

 9.9. Size:202K  inchange semiconductor
 2sa756.pdf

isc Silicon PNP Power Transistor 2SA756 DESCRIPTION High Power Dissipation- P = 50W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = -80V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio amplifier power output stage and general purpose applications. ABSOLUTE MAXIMUM RATINGS