2SA761-2 Todos los transistores

 9.1. Size:69K  wingshing
 2sa769.pdf

2SA769 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SC1827 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -4 A Collector Dissipation (Tc=25 PC 30 W Jun

 9.2. Size:154K  jmnic
 2sa766.pdf

 9.3. Size:147K  jmnic
 2sa768.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA768 DESCRIPTION With TO-220 package Complement to type 2SC1826 APPLICATIONS For low frequency power amplifier applicattions PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER

 9.4. Size:153K  jmnic
 2sa765.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA765 DESCRIPTION With TO-66 package Low collector saturation voltage APPLICATIONS Desinged for general-purpose power amplifier and applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER C

 9.5. Size:147K  jmnic
 2sa769.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA769 DESCRIPTION With TO-220 package Complement to type 2SC1827 APPLICATIONS For low frequency power amplifier applicattions PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETE

 9.6. Size:153K  jmnic
 2sa764.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA764 DESCRIPTION With TO-66 package Low collector saturation voltage Complement to type 2SC1444 APPLICATIONS Desinged for general-purpose power amplifier and applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratin

 9.7. Size:209K  inchange semiconductor
 2sa766.pdf

isc Silicon PNP Power Transistor 2SA766 DESCRIPTION Collector-Base Breakdown Voltage- V = -150V(Min) (BR)CBO High Collector Power Dissipation- Complement to Type 2SC1450 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Line-operated vertical deflection output Medium power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

 9.8. Size:216K  inchange semiconductor
 2sa768.pdf

isc Silicon PNP Power Transistor 2SA768 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60(V)(Min.) (BR)CEO Complement to Type 2SC1826 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

 9.9. Size:207K  inchange semiconductor
 2sa765.pdf

isc Silicon PNP Power Transistor 2SA765 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Low Collector Saturation Voltage- V = 1.5V(Max.)@ I = 4A CE(sat) C Complement to Type 2SC1445 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose power amplifier applications ABSOLUTE MA

 9.10. Size:180K  inchange semiconductor
 2sa762.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA762 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -110V(Min) (BR)CEO Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for general purpose power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

 9.11. Size:216K  inchange semiconductor
 2sa769.pdf

isc Silicon PNP Power Transistor 2SA769 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80(V)(Min.) (BR)CEO Complement to Type 2SC1827 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

 9.12. Size:208K  inchange semiconductor
 2sa764.pdf

isc Silicon PNP Power Transistor 2SA764 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Low Collector Saturation Voltage- V = 1.5V(Max.)@ I = 4A CE(sat) C Complement to Type 2SC1444 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose power amplifier applications ABSOLUTE MA