2SA766
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA766
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20
W
Tensión colector-base (Vcb): 150
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 1.2
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 15
MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta:
TO66
Búsqueda de reemplazo de transistor bipolar 2SA766
2SA766
Datasheet (PDF)
..1. Size:154K jmnic
2sa766.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA766 DESCRIPTION With TO-66 package High power dissipation Complement to type 2SC1450 APPLICATIONS Line-operated vertical deflection output Medium power amplifier PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 CollectorAbsolute maximum ratings(Ta=
..2. Size:209K inchange semiconductor
2sa766.pdf
isc Silicon PNP Power Transistor 2SA766DESCRIPTIONCollector-Base Breakdown Voltage-: V = -150V(Min)(BR)CBOHigh Collector Power Dissipation-Complement to Type 2SC1450Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLine-operated vertical deflection outputMedium power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSY
9.1. Size:69K wingshing
2sa769.pdf
2SA769 PNP EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SC1827ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -4 A Collector Dissipation (Tc=25 PC 30 W Jun
9.2. Size:147K jmnic
2sa768.pdf
JMnic Product SpecificationSilicon PNP Power Transistors 2SA768 DESCRIPTION With TO-220 package Complement to type 2SC1826 APPLICATIONS For low frequency power amplifier applicattions PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER
9.3. Size:153K jmnic
2sa765.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA765 DESCRIPTION With TO-66 package Low collector saturation voltage APPLICATIONS Desinged for general-purpose power amplifier and applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER C
9.4. Size:147K jmnic
2sa769.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA769 DESCRIPTION With TO-220 package Complement to type 2SC1827 APPLICATIONS For low frequency power amplifier applicattions PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETE
9.5. Size:153K jmnic
2sa764.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA764 DESCRIPTION With TO-66 package Low collector saturation voltage Complement to type 2SC1444 APPLICATIONS Desinged for general-purpose power amplifier and applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 CollectorAbsolute maximum ratin
9.6. Size:216K inchange semiconductor
2sa768.pdf
isc Silicon PNP Power Transistor 2SA768DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = -60(V)(Min.)(BR)CEOComplement to Type 2SC1826Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol
9.7. Size:207K inchange semiconductor
2sa765.pdf
isc Silicon PNP Power Transistor 2SA765DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 1.5V(Max.)@ I = 4ACE(sat) CComplement to Type 2SC1445Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose power amplifier applicationsABSOLUTE MA
9.8. Size:180K inchange semiconductor
2sa762.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA762DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -110V(Min)(BR)CEOLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general purpose power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
9.9. Size:216K inchange semiconductor
2sa769.pdf
isc Silicon PNP Power Transistor 2SA769DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = -80(V)(Min.)(BR)CEOComplement to Type 2SC1827Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol
9.10. Size:208K inchange semiconductor
2sa764.pdf
isc Silicon PNP Power Transistor 2SA764DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 1.5V(Max.)@ I = 4ACE(sat) CComplement to Type 2SC1444Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose power amplifier applicationsABSOLUTE MA
Otros transistores... 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.
