2SA771 Todos los transistores

 ..1. Size:152K  jmnic
 2sa770 2sa771.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA770 2SA771 DESCRIPTION With TO-220 package Complement to type 2SC1985/1986 Low collector saturation voltage APPLICATIONS For general and industrial purpose applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Abs

 ..2. Size:236K  sanken-ele
 2sa770 2sa771.pdf

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 ..3. Size:123K  inchange semiconductor
 2sa770 2sa771.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA770 2SA771 DESCRIPTION With TO-220 package Complement to type 2SC1985/1986 Low collector saturation voltage APPLICATIONS For general and industrial purpose applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and sy

 ..4. Size:216K  inchange semiconductor
 2sa771.pdf

isc Silicon PNP Power Transistor 2SA771 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80(V)(Min.) (BR)CEO Complement to Type 2SC1986 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

 9.1. Size:46K  panasonic
 2sa777.pdf

Transistor 2SA777 Silicon PNP epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SC1509 5.9 0.2 4.9 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base vo

 9.2. Size:50K  panasonic
 2sa777 e.pdf

Transistor 2SA777 Silicon PNP epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SC1509 5.9 0.2 4.9 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base vo

 9.3. Size:42K  hitachi
 2sa778.pdf

 9.4. Size:147K  jmnic
 2sa775.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA775 DESCRIPTION With TO-220 package High breakdown voltage APPLICATIONS For TV vertical output amplifier applicatons PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER COND

 9.5. Size:181K  inchange semiconductor
 2sa779.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA779 DESCRIPTION DC Current Gain- h = 40(Min)@ I = -0.15A FE C Collector-Emitter Sustaining Voltage - V = -35V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as audio amplifiers and drivers utilizing complementary or quasi complementa

 9.6. Size:216K  inchange semiconductor
 2sa770.pdf

isc Silicon PNP Power Transistor 2SA770 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60(V)(Min.) (BR)CEO Complement to Type 2SC1985 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

 9.7. Size:201K  inchange semiconductor
 2sa775.pdf

isc Silicon PNP Power Transistor 2SA775 DESCRIPTION Collector-Emitter Breakdown Voltage V = -100V(Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose output amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base V