2SA80 Todos los transistores

 0.1. Size:211K  1
 2sa806 2sa1558.pdf

 0.2. Size:145K  jmnic
 2sa808.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA808 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1619 APPLICATIONS For power amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBO

 0.3. Size:146K  jmnic
 2sa807.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA807 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1618 APPLICATIONS For power amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBO

 0.4. Size:195K  inchange semiconductor
 2sa808.pdf

isc Silicon PNP Power Transistor 2SA808 DESCRIPTION High Power Dissipation- P = 50W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = -80V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C

 0.5. Size:195K  inchange semiconductor
 2sa807.pdf

isc Silicon PNP Power Transistor 2SA807 DESCRIPTION High Power Dissipation- P = 50W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = -60V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C