2SA800 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA800
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25 W
Tensión colector-base (Vcb): 25 V
Tensión colector-emisor (Vce): 12 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.03 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 1500 MHz
Capacitancia de salida (Cc): 1.8 pF
Ganancia de corriente contínua (hFE): 60
Encapsulados: TO72
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2SA800 datasheet
2sa808.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA808 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1619 APPLICATIONS For power amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBO
2sa807.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA807 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1618 APPLICATIONS For power amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBO
2sa808.pdf
isc Silicon PNP Power Transistor 2SA808 DESCRIPTION High Power Dissipation- P = 50W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = -80V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C
Otros transistores... 2SA795, 2SA795A, 2SA795B, 2SA796, 2SA797, 2SA798, 2SA799, 2SA80, 2N4401, 2SA801, 2SA802, 2SA803, 2SA804, 2SA805, 2SA806, 2SA807, 2SA808
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