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2SA808A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SA808A
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 50 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 6 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 10 MHz
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO3

 Búsqueda de reemplazo de transistor bipolar 2SA808A

 

2SA808A Datasheet (PDF)

 8.1. Size:145K  jmnic
2sa808.pdf

2SA808A
2SA808A

JMnic Product Specification Silicon PNP Power Transistors 2SA808 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1619 APPLICATIONS For power amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBO

 8.2. Size:195K  inchange semiconductor
2sa808.pdf

2SA808A
2SA808A

isc Silicon PNP Power Transistor 2SA808DESCRIPTIONHigh Power Dissipation-: P = 50W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -80V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C

 9.1. Size:211K  1
2sa806 2sa1558.pdf

2SA808A
2SA808A

 9.2. Size:146K  jmnic
2sa807.pdf

2SA808A
2SA808A

JMnic Product Specification Silicon PNP Power Transistors 2SA807 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1618 APPLICATIONS For power amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBO

 9.3. Size:195K  inchange semiconductor
2sa807.pdf

2SA808A
2SA808A

isc Silicon PNP Power Transistor 2SA807DESCRIPTIONHigh Power Dissipation-: P = 50W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -60V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C

Otros transistores... 2SA801 , 2SA802 , 2SA803 , 2SA804 , 2SA805 , 2SA806 , 2SA807 , 2SA808 , BC556 , 2SA809 , 2SA81 , 2SA810 , 2SA811 , 2SA811A , 2SA811AC15 , 2SA811AC16 , 2SA811AC17 .

 

 
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