2SA810 Todos los transistores

 9.1. Size:142K  1
 2sa818.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA818 DESCRIPTION Collector-Emitter Breakdown Voltage V = -160V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC1628 APPLICATIONS Power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base

 9.2. Size:209K  toshiba
 2sa817.pdf

2SA817 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA817 Audio Frequency Amplifier Applications Unit mm Complementary to 2SC1627. Suitable for driver of 20 25 watts audio amplifiers. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEB

 9.3. Size:102K  toshiba
 2sa814 2sa815.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.4. Size:173K  toshiba
 2sa817a.pdf

 9.5. Size:241K  nec
 2sa812.pdf

 9.6. Size:178K  nec
 2sa811a.pdf

 9.7. Size:243K  secos
 2sa812k.pdf

2SA812K -50 V, -100 mA PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES Complementary to 2SC1623K High DC Current Gain hFE = 200 TYP. (VCE = -6V, IC = -1mA) High Voltage VCEO = -50V PACKAGE DIMENSIONS SOT-23 Collector 3 Dim Min Max A 2.800 3.040 1 Base B 1.200 1.400

 9.8. Size:2054K  jiangsu
 2sa812.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 2SA812 TRANSISTOR (PNP) 1. BASE Unit mm FEATURES 2. EMITTER 3. COLLECTOR Complementary to 2SC1623 High DC Current Gain hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage Vceo=-50V MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO

 9.9. Size:159K  jmnic
 2sa814 2sa815.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA814 2SA815 DESCRIPTION With TO-220 package Complement to type 2SC1624/1625 High breakdown voltage APPLICATIONS Medium power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and sym

 9.10. Size:112K  microelectronics
 2sc1626 2sa816.pdf

 9.11. Size:757K  htsemi
 2sa812.pdf

2SA8 1 2 SOT-23 TRANSISTOR(PNP) 1. BASE Unit mm FEATURES 2. EMITTER 3. COLLECTOR Complementary to 2SC1623 High DC Current Gain hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage Vceo=-50V MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V

 9.12. Size:273K  gsme
 2sa812.pdf

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM812 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO -50 Vdc - C

 9.13. Size:244K  lge
 2sa812 sot-23.pdf

2SA812 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to 2SC1623 High DC Current Gain hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage Vceo=-50V MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector- Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V

 9.14. Size:232K  lge
 2sa817a to-92mod.pdf

2SA817A TO-92MOD Transistor (PNP) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE 5.800 6.200 Features 8.400 8.800 Complementary to 2SC1627A. 0.900 1.100 Driver Stage Application of 30 to 0.400 0.600 35 Watts Amplifiers. 13.800 14.200 1.500 TYP 2.900 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.100 0.000 1.600

 9.15. Size:257K  wietron
 2sa812.pdf

2SA812 PNP General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25 C) Rating Symbol Value Unit VCBO Collector-Base Voltage -60 V Collector-Emitter Voltage VCEO -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current - Continuous -150 mA Total Device Dissipation FR-5 Board, PD 200 mW T =25 C A Derate above 25 C mW/ C 1.8 Thermal Resistance,

 9.16. Size:345K  willas
 2sa812xlt1.pdf

FM120-M WILLAS 2SA812xLT1 THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low pr FEATUREofile surface mounted application in order to o

 9.17. Size:621K  blue-rocket-elect
 2sa812.pdf

2SA812 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features 2SC1623 Complementary pair with 2SC1623. / Applications Audio frequency amplifier application. / Equivalent Circuit / Pinning

 9.18. Size:191K  lrc
 l2sa812slt1g.pdf

LESHAN RADIO COMPANY, LTD. General Purpose Transistors FEATURE L2SA812QLT1G Series High Voltage VCEO = -50 V. S-L2SA812QLT1G Series Epitaxial planar type. NPN complement L2SC1623 We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualifi

 9.19. Size:187K  lrc
 l2sa812qlt1g.pdf

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SA812QLT1G Series FEATURE S-L2SA812QLT1G Series High Voltage VCEO = -50 V. Epitaxial planar type. NPN complement L2SC1623 We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualifie

 9.20. Size:193K  lrc
 l2sa812qlt1g l2sa812qlt3g l2sa812rlt1g l2sa812rlt3g l2sa812slt3g l2sa812slt1g.pdf

LESHAN RADIO COMPANY, LTD. L2SA812QLT1G Series General Purpose Transistors FEATURE S-L2SA812QLT1G Series High Voltage VCEO = -50 V. Epitaxial planar type. NPN complement L2SC1623 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requirements; AEC-Q101 Qu

 9.21. Size:193K  lrc
 l2sa812rlt1g.pdf

LESHAN RADIO COMPANY, LTD. L2SA812QLT1G Series General Purpose Transistors FEATURE S-L2SA812QLT1G Series High Voltage VCEO = -50 V. Epitaxial planar type. NPN complement L2SC1623 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requirements; AEC-Q101 Qu

 9.22. Size:193K  lrc
 l2sa812qlt1g l2sa812rlt1g l2sa812slt3g l2sa812slt1g.pdf

LESHAN RADIO COMPANY, LTD. L2SA812QLT1G Series General Purpose Transistors FEATURE S-L2SA812QLT1G Series High Voltage VCEO = -50 V. Epitaxial planar type. NPN complement L2SC1623 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requirements; AEC-Q101 Qu

 9.23. Size:816K  kexin
 2sa812.pdf

SMD Type SMD Type Transistors PNP Transistors 2SA812 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High DC Current Gain hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) 1 2 High Voltage VCEO = -50 V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO

 9.24. Size:1208K  kexin
 2sa811a.pdf

SMD Type Transistors PNP Transistors 2SA811A SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-50mA 1 2 Collector Emitter Voltage VCEO=-120V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Co

 9.25. Size:260K  galaxy
 2sa812.pdf

Product specification Silicon Epitaxial Planar Transistor 2SA812 FEATURES Pb Commplementary to 2SC1623. Lead-free High DC current gain h =200typ. FE (V =-6.0V,I =-1.0mA) CE C High Voltage V =-50V. CEO APPLICATIONS Audio frequency, general purpose amplifier. SOT-23 ORDERING INFORMATION Type No. Marking Package Code 2SA812 M4/M5/M6/M7 SOT-23

 9.26. Size:385K  slkor
 2sa812m4 2sa812m5 2sa812m6 2sa812m7 2sa812m8.pdf

2SA812 SOT-23 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR (PNP) 1. BASE Unit mm FEATURES 2. EMITTER 3. COLLECTOR Complementary to 2SC1623 High DC Current Gain hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage Vceo=-50V MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage -60 V VCEO Collector-Emitter Volta

 9.27. Size:1092K  cn shikues
 2sa812.pdf

 9.28. Size:1861K  cn yongyutai
 2sa812.pdf

 9.29. Size:1193K  cn yongyutai
 2sa812l 2sa812h.pdf

2SA812 TRANSISTOR (PNP) SOT 323 FEATURES Small Surface Mount Package High DC Current Gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage -50 V CBO 2. EMITTER V Collector-Emitter Voltage -45 V CEO 3. COLLECTOR V Emitter-Base Voltage -5 V EBO IC Collector Current -100 mA P Collector Power Dissipat

 9.30. Size:815K  cn yangzhou yangjie elec
 2sa812-m4 2sa812-m5 2sa812-m6 2sa812-m7.pdf

RoHS RoHS COMPLIANT COMPLIANT 2SA812 PNP Transistor Features Epoxy meets UL-94 V-0 flammability rating Moisture Sensitivity Level 1 Halogen free available upon request by adding suffix HF Surface mount package ideally Suited for Automatic Insertion PNP Mechanical Data ackage SOT-23 P Terminals Tin plated leads, solderable per

 9.31. Size:281K  cn fosan
 2sa812.pdf

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD 2SA812 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO -50 Vdc - Collector-Base Voltage VCBO -60 Vdc - Emitter-Base Voltage VEBO -5.0 Vdc - Co

 9.32. Size:620K  cn hottech
 2sa812.pdf

2SA812 BIPOLAR TRANSISTOR (PNP) FEATURES High DC current gain h =200(Typ) V = -6V,I = -1mA FE CE C High voltage V = -50V CEO Surface Mount device Complementary to 2SC1623 SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unles

 9.33. Size:91K  inchange semiconductor
 2sa814 2sa815.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA814 2SA815 DESCRIPTION With TO-220 package Complement to type 2SC1624/1625 High breakdown voltage APPLICATIONS Medium power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline

 9.34. Size:207K  inchange semiconductor
 2sa814.pdf

isc Silicon PNP Power Transistor 2SA814 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120(V)(Min.) (BR)CEO Complement to Type 2SC1624 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Medium power amplifier applications. Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

 9.35. Size:204K  inchange semiconductor
 2sa815.pdf

isc Silicon PNP Power Transistor 2SA815 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100(V)(Min.) (BR)CEO Complement to Type 2SC1625 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Medium power amplifier applications. Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U