2SA838 Todos los transistores

 ..1. Size:41K  panasonic
 2sa838 e.pdf

Transistor 2SA838 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC1359 5.0 0.2 4.0 0.2 Features High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V +0.2 +0.2 Collector to emitter voltage VCEO 20 V 0.45 0.1 0.45 0.1 1.27 1.27 Emitter to ba

 ..2. Size:37K  panasonic
 2sa838.pdf

Transistor 2SA838 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC1359 5.0 0.2 4.0 0.2 Features High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V +0.2 +0.2 Collector to emitter voltage VCEO 20 V 0.45 0.1 0.45 0.1 1.27 1.27 Emitter to ba

 9.1. Size:50K  rohm
 2sa830s.pdf

2SB852K / 2SA830S Transistors Transistors 2SD1383K / 2SC1645S (96-118-B20) (96-205-D20) 280 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document a

 9.2. Size:257K  rohm
 2sa790 2sa791 2sa830 2sa831.pdf

 9.3. Size:52K  rohm
 2sb852k 2sa830s 2sd1383k 2sc1645s.pdf

2SB852K / 2SA830S Transistors Transistors 2SD1383K / 2SC1645S (96-118-B20) (96-205-D20) 280 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document a

 9.4. Size:32K  hitachi
 2sa836.pdf

2SA836 Silicon PNP Epitaxial Application Low frequency low noise amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA836 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 55 V Collector to emitter voltage VCEO 55 V Emitter to base voltage VEBO 5 V Collector current IC 100 mA Emitter current IE 100 mA C

 9.5. Size:42K  no
 2sa839.pdf

 9.6. Size:156K  jmnic
 2sa839.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA839 DESCRIPTION With TO-220 package Complement to type 2SC1669 High breakdown voltage APPLICATIONS Audio power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base

 9.7. Size:145K  jmnic
 2sa837.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA837 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1667 APPLICATIONS For radio frequency and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBO

 9.8. Size:205K  inchange semiconductor
 2sa839.pdf

isc Silicon PNP Power Transistor 2SA839 DESCRIPTION Collector-Emitter Breakdown Voltage V = -150V(Min) (BR)CEO DC Current Gain h = 40-240@ I = -0.5A FE C Complement to Type 2SC1669 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio power amplifier applications. Driver stage amplifier applications. ABSOLUTE MAXIMUM

 9.9. Size:181K  inchange semiconductor
 2sa837.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA837 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1667 APPLICATIONS For radio frequency and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum rating