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2SA845H . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SA845H
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 150 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 40 MHz
   Capacitancia de salida (Cc): 10 pF
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO18

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2SA845H Datasheet (PDF)

 9.1. Size:23K  hitachi
2sa844.pdf

2SA845H 2SA845H

2SA844Silicon PNP EpitaxialApplicationLow frequency amplifierOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA844Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 55 VCollector to emitter voltage VCEO 55 VEmitter to base voltage VEBO 5 VCollector current IC 100 mAEmitter current IE 100 mACollector p

 9.2. Size:77K  secos
2sa844.pdf

2SA845H

2SA844 -0.1A , -55V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High DC Current Gain G H Low Frequency Amplifier EmitterCollectorBase JCLASSIFICATION OF hFE A DMillimeter REF. Min. Max.Product-Rank 2SA844-C 2SA844-D 2SA844-EA 4.40 4

 9.3. Size:204K  inchange semiconductor
2sa843.pdf

2SA845H 2SA845H

isc Silicon PNP Power Transistor 2SA843DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -150V(Min)(BR)CEODC Current Gain: h = 60-200@ I = -0.4AFE CComplement to Type 2SC1683Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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