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2SA872A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SA872A
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 120 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 120 MHz
   Capacitancia de salida (Cc): 3.6 pF
   Ganancia de corriente contínua (hfe): 250
   Paquete / Cubierta: TO92

 Búsqueda de reemplazo de transistor bipolar 2SA872A

 

2SA872A Datasheet (PDF)

 8.1. Size:37K  hitachi
2sa872.pdf

2SA872A
2SA872A

2SA872, 2SA872ASilicon PNP EpitaxialApplication Low frequency low noise amplifier Complementary pair with 2SC1775/AOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA872, 2SA872AAbsolute Maximum Ratings (Ta = 25C)Item Symbol 2SA872 2SA872A UnitCollector to base voltage VCBO 90 120 VCollector to emitter voltage VCEO 90 120 VEmitter to base

 9.1. Size:295K  1
2sa874m 2sa1548.pdf

2SA872A
2SA872A

 9.2. Size:296K  1
2sa874 2sa1559.pdf

2SA872A
2SA872A

 9.3. Size:49K  panasonic
2sa879 e.pdf

2SA872A
2SA872A

Transistor2SA879Silicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SC15735.9 0.2 4.9 0.2FeaturesHigh collector to emitter voltage VCEO.0.7 0.1Absolute Maximum Ratings (Ta=25C)2.54 0.15Parameter Symbol Ratings UnitCollector to base voltage VCBO 250 VCollector to emitter voltage VCEO 200 VEmitter to base voltage VEBO

 9.4. Size:148K  jmnic
2sa877 2sa878.pdf

2SA872A
2SA872A

JMnic Product Specification Silicon PNP Power Transistors 2SA877 2SA878 DESCRIPTION With TO-3 package High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute

 9.5. Size:193K  inchange semiconductor
2sa877.pdf

2SA872A
2SA872A

isc Silicon PNP Power Transistor 2SA877DESCRIPTIONHigh Power Dissipation-: P = 100W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -80V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

 9.6. Size:190K  inchange semiconductor
2sa877 2sa878.pdf

2SA872A
2SA872A

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA877 2SA878 DESCRIPTION With TO-3 package High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 Co

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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