2SA903 Todos los transistores

 9.1. Size:39K  no
 2sa904.pdf

 9.2. Size:41K  no
 2sa905.pdf

 9.3. Size:32K  no
 2sa907.pdf

 9.4. Size:154K  jmnic
 2sa900.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA900 DESCRIPTION With TO-126 package Complement to type 2SC1568 Low collector saturation voltage APPLICATIONS For audio frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE U

 9.5. Size:148K  jmnic
 2sa907 2sa908 2sa909.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA907/908/909 DESCRIPTION With TO-3 package Complement to type 2SC1584/1585/1586 APPLICATIONS For power switching and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CO

 9.6. Size:74K  usha
 2sa9012.pdf

Transistors 2SA9012

 9.7. Size:86K  usha
 2sa9015.pdf

Transistors 2SA9015

 9.8. Size:217K  inchange semiconductor
 2sa900.pdf

isc Silicon PNP Power Transistor 2SA900 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -18V(Min) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage Complement to Type 2SC1568 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATI

 9.9. Size:195K  inchange semiconductor
 2sa907 2sa908 2sa909.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA907/908/909 DESCRIPTION With TO-3 package Complement to type 2SC1584/1585/1586 APPLICATIONS For power switching and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SY

 9.10. Size:194K  inchange semiconductor
 2sa908.pdf

isc Silicon PNP Power Transistor 2SA908 DESCRIPTION High Power Dissipation- P = 150W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = -150V(Min.) (BR)CEO Complement to Type 2SC1585 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(

 9.11. Size:194K  inchange semiconductor
 2sa907.pdf

isc Silicon PNP Power Transistor 2SA907 DESCRIPTION High Power Dissipation- P = 150W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = -100V(Min.) (BR)CEO Complement to Type 2SC1584 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(

 9.12. Size:194K  inchange semiconductor
 2sa909.pdf

isc Silicon PNP Power Transistor 2SA909 DESCRIPTION High Power Dissipation- P = 150W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = -200V(Min.) (BR)CEO Complement to Type 2SC1586 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(