2SB1008 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB1008
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50 MHz
Ganancia de corriente contínua (hfe): 1000
Paquete / Cubierta: TO126
Búsqueda de reemplazo de transistor bipolar 2SB1008
2SB1008 Datasheet (PDF)
rej03g0660 2sb1002ds-1.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sb1002.pdf
2SB1002Silicon PNP EpitaxialApplication Low frequency power amplifier Complementary pair with 2SD1368OutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SB1002Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 70 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 6 V
2sb1001.pdf
2SB1001Silicon PNP EpitaxialApplication Low frequency power amplifier Complementary pair with 2SD1367OutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SB1001Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 20 VCollector to emitter voltage VCEO 16 VEmitter to base voltage VEBO 6 V
2sb1009.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1009 DESCRIPTION With TO-126 package Complement to type 2SD1380 APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collec
2sb1005.pdf
JMnic Product SpecificationSilicon PNP Power Transistors 2SB1005 DESCRIPTION With TO-220C package High DC Current Gain DARLINGTON APPLICATIONS For audio frequency power amplifier applications PINNING PIN DESCRIPTION1 Base Collector; connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Coll
2sb1007.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1007 DESCRIPTION With TO-126 package Complement to type 2SD1378 High breakdown voltage APPLICATIONS Low frequency power amplification PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Co
2sb1002.pdf
SMD Type TransistorsPNP Transistors2SB1002 Features1.70 0.1 Low frequency power amplifier Complementary to 2SD13680.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -70 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -6 Collector Current - Cont
2sb1000.pdf
SMD Type TransistorsPNP Transistors2SB1000 Features1.70 0.1 Low frequency power amplifier Complementary to 2SD13660.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage VEBO -5 Collector Current - Cont
2sb1001.pdf
SMD Type TransistorsPNP Transistors2SB1001 Features 1.70 0.1 Low frequency power amplifier Complementary to 2SD13670.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -16 V Emitter - Base Voltage VEBO -6 Collector Current - Conti
2sb1009.pdf
isc Silicon PNP Power Transistor 2SB1009DESCRIPTIONHigh Collector Current -I = -2ACCollector-Emitter Breakdown Voltage-: V = -32V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageComplement to Type 2SD1380Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applicati
2sb1005.pdf
isc Silicon PNP Darlington Power Transistor 2SB1005DESCRIPTIONHigh DC Current Gain-: h = 750(Min)@ I = -1.5AFE CCollector-Emitter Sustaining Voltage-: V = -50V(Min)CEO(SUS)With TO-220C packageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applicationsABSOLUTE MAXIMUM RA
2sb1007.pdf
isc Silicon PNP Power Transistor 2SB1007DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SD1378Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
