2SB1008 Todos los transistores

 8.1. Size:76K  renesas
 rej03g0660 2sb1002ds-1.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:39K  rohm
 2sb1009.pdf

 8.3. Size:34K  rohm
 2sb1007.pdf

 8.4. Size:31K  hitachi
 2sb1002.pdf

2SB1002 Silicon PNP Epitaxial Application Low frequency power amplifier Complementary pair with 2SD1368 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SB1002 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 70 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 6 V

 8.5. Size:146K  hitachi
 2sb1000.pdf

 8.6. Size:32K  hitachi
 2sb1001.pdf

2SB1001 Silicon PNP Epitaxial Application Low frequency power amplifier Complementary pair with 2SD1367 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SB1001 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 16 V Emitter to base voltage VEBO 6 V

 8.7. Size:145K  jmnic
 2sb1009.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1009 DESCRIPTION With TO-126 package Complement to type 2SD1380 APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collec

 8.8. Size:147K  jmnic
 2sb1005.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1005 DESCRIPTION With TO-220C package High DC Current Gain DARLINGTON APPLICATIONS For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector; connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Coll

 8.9. Size:153K  jmnic
 2sb1007.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1007 DESCRIPTION With TO-126 package Complement to type 2SD1378 High breakdown voltage APPLICATIONS Low frequency power amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Co

 8.10. Size:588K  kexin
 2sb1002.pdf

SMD Type Transistors PNP Transistors 2SB1002 Features 1.70 0.1 Low frequency power amplifier Complementary to 2SD1368 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -70 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -6 Collector Current - Cont

 8.11. Size:990K  kexin
 2sb1000.pdf

SMD Type Transistors PNP Transistors 2SB1000 Features 1.70 0.1 Low frequency power amplifier Complementary to 2SD1366 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage VEBO -5 Collector Current - Cont

 8.12. Size:597K  kexin
 2sb1001.pdf

SMD Type Transistors PNP Transistors 2SB1001 Features 1.70 0.1 Low frequency power amplifier Complementary to 2SD1367 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -16 V Emitter - Base Voltage VEBO -6 Collector Current - Conti

 8.13. Size:213K  inchange semiconductor
 2sb1009.pdf

isc Silicon PNP Power Transistor 2SB1009 DESCRIPTION High Collector Current -I = -2A C Collector-Emitter Breakdown Voltage- V = -32V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Complement to Type 2SD1380 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applicati

 8.14. Size:214K  inchange semiconductor
 2sb1005.pdf

isc Silicon PNP Darlington Power Transistor 2SB1005 DESCRIPTION High DC Current Gain- h = 750(Min)@ I = -1.5A FE C Collector-Emitter Sustaining Voltage- V = -50V(Min) CEO(SUS) With TO-220C package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications ABSOLUTE MAXIMUM RA

 8.15. Size:212K  inchange semiconductor
 2sb1007.pdf

isc Silicon PNP Power Transistor 2SB1007 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SD1378 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA