2SB1014 Todos los transistores

 8.1. Size:166K  toshiba
 2sb1015a.pdf

2SB1015A TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A Audio Frequency Power Amplifier Applications Unit mm Low collector saturation voltage VCE (sat) = -1.7 V (max) (I = -3 A, I = -0.3 A) C B Collector power dissipation P = 25 W (Tc = 25 C) C Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -60

 8.2. Size:148K  toshiba
 2sb1015.pdf

 8.3. Size:168K  toshiba
 2sb1016a.pdf

 8.4. Size:199K  toshiba
 2sb1018.pdf

 8.5. Size:233K  toshiba
 2sb1018a.pdf

 8.6. Size:87K  panasonic
 2sb1011.pdf

Power Transistors 2SB1011 Silicon PNP triple diffusion planar type For low-frequency output amplification Unit mm 8.0+0.5 0.1 3.2 0.2 3.16 0.1 Features High collector-base voltage (Emitter open) VCBO High collector-emitter voltage (Base open) VCEO Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat) Absolute Maximu

 8.7. Size:63K  utc
 2sb1017.pdf

UNISONIC TECHNOLOGIES CO., LTD 2SB1017 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SB1017 is a PNP silicon epitaxial transistor suited to be used in power amplifier applications. FEATURES * Low base drive ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SB1017L-

 8.8. Size:33K  hitachi
 2sb1012.pdf

2SB1012(K) Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD1376(K) Outline TO-126 MOD 2 3 1. Emitter ID 2. Collector 3. Base 1 5 k 1 k 2 3 (Typ) (Typ) 1 2SB1012(K) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base

 8.9. Size:33K  no
 2sb1017.pdf

 8.10. Size:45K  no
 2sb1019.pdf

 8.11. Size:69K  wingshing
 2sb1016.pdf

 8.12. Size:204K  jmnic
 2sb1015.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1015 DESCRIPTION With TO-220Fa package Collector power dissipation PC=25W@TC=25 Low collector saturation voltage Complement to type 2SD1406 APPLICATIONS For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 )

 8.13. Size:208K  jmnic
 2sb1017.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1017 DESCRIPTION With TO-220Fa package Complement to type 2SD1408 APPLICATIONS For power amplifications Recommended for 20-25W high-fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VAL

 8.14. Size:213K  jmnic
 2sb1016.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1016 DESCRIPTION With TO-220Fa package High breakdown voltage Low collector saturation voltage Complement to type 2SD1407 APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Co

 8.15. Size:208K  jmnic
 2sb1018.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1018 DESCRIPTION With TO-220F package High collector current Low collector saturation voltage Complement to type 2SD1411 APPLICATIONS Power amplifier applications High current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Base

 8.16. Size:156K  jmnic
 2sb1019.pdf

 8.17. Size:216K  inchange semiconductor
 2sb1015.pdf

isc Silicon PNP Power Transistor 2SB1015 DESCRIPTION Low Collector Saturation Voltage- V = -1.7 V(Max)@I = -3A CE(sat) C Good Linearity of h FE Complement to Type 2SD1406 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P

 8.18. Size:217K  inchange semiconductor
 2sb1017.pdf

isc Silicon PNP Power Transistor 2SB1017 DESCRIPTION Low Collector Saturation Voltage- V = -1.7V(Max)@I = -3A CE(sat) C Good Linearity of h FE Complement to Type 2SD1408 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for 20 25W high-fidelity audio frequency amplifie

 8.19. Size:217K  inchange semiconductor
 2sb1016.pdf

isc Silicon PNP Power Transistor 2SB1016 DESCRIPTION Low Collector Saturation Voltage- V = -2.0 V(Max)@I = -4A CE(sat) C Good Linearity of h FE Complement to Type 2SD1407 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P

 8.20. Size:213K  inchange semiconductor
 2sb1018.pdf

isc Silicon PNP Power Transistor 2SB1018 DESCRIPTION Low Collector Saturation Voltage- V = -0.5V(Max)@I = -4A CE(sat) C High Current Capability- I = -7A C Complement to Type 2SD1411 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current switching applications. Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(

 8.21. Size:216K  inchange semiconductor
 2sb1019.pdf

isc Silicon PNP Power Transistor 2SB1019 DESCRIPTION Low Collector Saturation Voltage- V = -0.4V(Max)@I = -4A CE(sat) C Good Linearity of h FE Complement to Type 2SD1412 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current switching applications. Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 8.22. Size:213K  inchange semiconductor
 2sb1018a.pdf

isc Silicon PNP Power Transistor 2SB1018A DESCRIPTION Low Collector Saturation Voltage- V = -0.5V(Max)@I = -4A CE(sat) C High Current Capability- I = -7A C Complement to Type 2SD1411A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current switching applications. Power amplifier applications. ABSOLUTE MAXIMUM RATING