2SB1015O Todos los transistores

 7.1. Size:166K  toshiba
 2sb1015a.pdf

2SB1015A TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A Audio Frequency Power Amplifier Applications Unit mm Low collector saturation voltage VCE (sat) = -1.7 V (max) (I = -3 A, I = -0.3 A) C B Collector power dissipation P = 25 W (Tc = 25 C) C Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -60

 7.2. Size:148K  toshiba
 2sb1015.pdf

 7.3. Size:204K  jmnic
 2sb1015.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1015 DESCRIPTION With TO-220Fa package Collector power dissipation PC=25W@TC=25 Low collector saturation voltage Complement to type 2SD1406 APPLICATIONS For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 )

 7.4. Size:216K  inchange semiconductor
 2sb1015.pdf

isc Silicon PNP Power Transistor 2SB1015 DESCRIPTION Low Collector Saturation Voltage- V = -1.7 V(Max)@I = -3A CE(sat) C Good Linearity of h FE Complement to Type 2SD1406 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P