2SB1026 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SB1026Silicon PNP EpitaxialApplication Low frequency power amplifier Complementary pair with 2SD1419OutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SB1026Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 100 VEmitter to base voltage VEBO 5 V

SMD Type TransistorsPNP Transistors2SB1026 Features 1.70 0.1 Low frequency power amplifier Complementary to 2SD14190.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -100 V Emitter - Base Voltage VEBO -5 Collector Current - Con

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SB1020A TOSHIBA Transistor Silicon PNP Triple Diffused Type (Darlington Power) 2SB1020A High-Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive Applications High DC current gain: hFE = 2000 (min) (VCE = -3 V, IC = -3 A) Low saturation voltage: VCE (sat) = -1.5 V (max) (IC = -3 A) Complementary to 2SD1415A Absolute Maximum Ratings (Tc = 25C)

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SB1025Silicon PNP EpitaxialApplication Low frequency power amplifier Complementary pair with 2SD1418OutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SB1025Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 80 VEmitter to base voltage VEBO 5 V

2SB1027Silicon PNP EpitaxialApplicationLow frequency amplifierOutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SB1027Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 180 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 5 VCollector current IC 1.5 ACollector peak

2SB1028Silicon PNP EpitaxialApplicationLow frequency power amplifierOutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SB1028Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 180 VCollector to emitter voltage VCEO 160 VEmitter to base voltage VEBO 5 VCollector current IC 1.5 ACollecto

JMnic Product Specification Silicon PNP Power Transistors 2SB1024 DESCRIPTION With TO-220Fa package High DC current gain Low saturation voltage Complement to type 2SD1414 APPLICATIONS Power amplifier and switching applications Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbo

JMnic Product Specification Silicon PNP Power Transistors 2SB1023 DESCRIPTION With TO-220Fa package High DC current gain Low saturation voltage Complement to type 2SD1413 APPLICATIONS Power amplifier and switching applications Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbo

JMnic Product Specification Silicon PNP Power Transistors 2SB1022 DESCRIPTION With TO-220Fa package High DC current gain Low saturation voltage Complement to type 2SD1417 APPLICATIONS High power switching applications Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol 3 Emi

JMnic Product Specification Silicon PNP Power Transistors 2SB1021 DESCRIPTION With TO-220Fa package High DC current gain Low saturation voltage Complement to type 2SD1416 APPLICATIONS High power switching applications Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol 3 Emi

JMnic Product Specification Silicon PNP Power Transistors 2SB1020 DESCRIPTION With TO-220Fa package High DC current gain Low saturation voltage Complement to type 2SD1415 APPLICATIONS High power switching applications Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol 3 Emi

SMD Type TransistorsPNP Transistors2SB1025 Features 1.70 0.1 Low frequency power amplifier Complementary to 2SD14180.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -80 V Emitter - Base Voltage VEBO -5 Collector Current - Cont

SMD Type TransistorsPNP Transistors2SB1027 Features1.70 0.1 Low frequency power amplifier0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Emitter Voltage VCEO -120 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -1.5A Collector

SMD Type TransistorsPNP Transistors2SB1028SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-1.5A Collector Emitter Voltage VCEO=-160V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Emitter Voltage VCEO -160 V Emitter - Base Vol

isc Silicon PNP Darlington Power Transistor 2SB1024DESCRIPTIONLow Collector Saturation Voltage-: V = -1.5V(Max.)@ I = -3ACE(sat) CHigh DC Current Gain-: h = 2000(Min)@ (V = -2V, I = -1A)FE CE CComplement to Type 2SD1414Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUT

isc Silicon PNP Darlingtion Power Transistor 2SB1023DESCRIPTIONHigh DC C urrent Gain-: h = 2000(Min.)@I = -1AFE CLow Collector Saturation Voltage-: V = -1.5V(Max)@I = -2ACE(sat) CGood Linearity of hFEComplement to Type 2SD1413Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applications.Hammer driv

isc Silicon PNP Darlingtion Power Transistor 2SB1022DESCRIPTIONHigh DC C urrent Gain-: h = 2000(Min.)@I = -3AFE CLow Collector Saturation Voltage-: V = -1.5V(Max)@I = -3ACE(sat) CGood Linearity of hFEComplement to Type 2SD1417Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applications.

isc Silicon PNP Darlingtion Power Transistor 2SB1021DESCRIPTIONHigh DC C urrent Gain-: h = 2000(Min.)@I = -3AFE CLow Collector Saturation Voltage-: V = -1.5V(Max)@I = -3ACE(sat) CGood Linearity of hFEComplement to Type 2SD1416Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applications.

isc Silicon PNP Darlingtion Power Transistor 2SB1020DESCRIPTIONHigh DC C urrent Gain-: h = 2000(Min.)@I = -3AFE CLow Collector Saturation Voltage-: V = -1.5V(Max)@I = -3ACE(sat) CGood Linearity of hFEComplement to Type 2SD1415Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applications.