2SB1034 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB1034
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 15 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 8 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 25 MHz
Ganancia de corriente contínua (hfe): 5000
Paquete / Cubierta: TO126
Búsqueda de reemplazo de transistor bipolar 2SB1034
2SB1034 Datasheet (PDF)
2sb1034.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1034 DESCRIPTION With TO-126 package Low collector saturation voltage High DC current gain DARLINGTON APPLICATIONS For power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS V
2sb1034.pdf
isc Silicon PNP Darlington Power Transistor 2SB1034DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = -1AFE CCollector-Emitter Sustaining Voltage-: V = -80V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -1.5V(Max)@ I = -1ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general
2sb1030a.pdf
Transistor2SB1030, 2SB1030ASilicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SD1423 and 2SD1423A4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitmarkingCollector to 2SB1030 30VCBO V1 2 3base voltage 2SB1030A 60Co
2sb1037 2sd1459.pdf
Ordering number:EN1256C PNP/NPN Planar Silicon Transistors2SB1037/2SD1459Color TV Vertical Output, Sound OutputApplicationsFeatures Package Dimensions High allowable collector dissipation (PC=2W).unit:mm Wide ASO.2010C[2SB1037/2SD1459]JEDEC : TO-220AB 1 : Base( ) : 2SB1037EIAJ : SC-46 2 : Collector3 : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25
2sb1030 e.pdf
Transistor2SB1030, 2SB1030ASilicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SD1423 and 2SD1423A4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitmarkingCollector to 2SB1030 30VCBO V1 2 3base voltage 2SB1030A 60Co
2sb1030.pdf
Transistor2SB1030, 2SB1030ASilicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SD1423 and 2SD1423A4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitmarkingCollector to 2SB1030 30VCBO V1 2 3base voltage 2SB1030A 60Co
2sb1036 e.pdf
Transistor2SB1036Silicon PNP epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Low noise voltage NV.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 120 V1.27 1.27Collector to emitter voltag
2sb1036.pdf
Transistor2SB1036Silicon PNP epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Low noise voltage NV.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 120 V1.27 1.27Collector to emitter voltag
2sb1032.pdf
2SB1032(K)Silicon PNP Triple DiffusedApplicationPower switching complementary pair with 2SD1436(K)OutlineTO-3P211. BaseID2. Collector(Flange)3. Emitter 1.0 k 200 (Typ) (Typ)13232SB1032(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base
2sb1033.pdf
2SB1033 PNP EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SD1437ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -60 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25 PC 40 W Ju
2sb1033.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1033 DESCRIPTION With TO-220 package Complement to type 2SD1437 APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMET
2sb1037.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SB1037 DESCRIPTION With TO-220 package High allowable collector dissipation. Complement to type 2SD1459 APPLICATIONS For color TV vertical output, sound output applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PA
2sb1033.pdf
isc Silicon PNP Power Transistor 2SB1033DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min.)(BR)CEOLow Collector Saturation Voltage: V = -1.5V(Max)@I = -2ACE(sat) CComplement to Type 2SD1437Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MA
2sb1038.pdf
isc Silicon PNP Power Transistor 2SB1038DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min.)(BR)CEOLow Collector Saturation Voltage: V = -1.5V(Max)@I = -2ACE(sat) CComplement to Type 2SD1310Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MA
2sb1032.pdf
isc Silicon PNP Darlington Power Transistor 2SB1032DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -5AFE CCollector-Emitter Sustaining Voltage-: V = -120V(Min)(BR)CEOComplement to Type 2SD1436Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMU
2sb1037.pdf
isc Silicon PNP Power Transistor 2SB1037DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOWide Area of Safe OperationComplement to Type 2SD1459Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV vertical output, sound outputapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM
2sb1031.pdf
isc Silicon PNP Darlington Power Transistor 2SB1031DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -8AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Complement to Type 2SD1435Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIM
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Liste
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