2SB1038 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB1038
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 10 MHz
Ganancia de corriente contínua (hFE): 120
Encapsulados: TO126
Búsqueda de reemplazo de 2SB1038
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2SB1038 datasheet
..1. Size:218K inchange semiconductor
2sb1038.pdf 
isc Silicon PNP Power Transistor 2SB1038 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min.) (BR)CEO Low Collector Saturation Voltage V = -1.5V(Max)@I = -2A CE(sat) C Complement to Type 2SD1310 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MA
8.1. Size:41K 1
2sb1030a.pdf
Transistor 2SB1030, 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SD1423 and 2SD1423A 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit marking Collector to 2SB1030 30 VCBO V 1 2 3 base voltage 2SB1030A 60 Co
8.3. Size:121K sanyo
2sb1037 2sd1459.pdf
Ordering number EN1256C PNP/NPN Planar Silicon Transistors 2SB1037/2SD1459 Color TV Vertical Output, Sound Output Applications Features Package Dimensions High allowable collector dissipation (PC=2W). unit mm Wide ASO. 2010C [2SB1037/2SD1459] JEDEC TO-220AB 1 Base ( ) 2SB1037 EIAJ SC-46 2 Collector 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25
8.4. Size:41K panasonic
2sb1030 e.pdf
Transistor 2SB1030, 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SD1423 and 2SD1423A 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit marking Collector to 2SB1030 30 VCBO V 1 2 3 base voltage 2SB1030A 60 Co
8.5. Size:38K panasonic
2sb1030.pdf
Transistor 2SB1030, 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SD1423 and 2SD1423A 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit marking Collector to 2SB1030 30 VCBO V 1 2 3 base voltage 2SB1030A 60 Co
8.6. Size:41K panasonic
2sb1036 e.pdf
Transistor 2SB1036 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Low noise voltage NV. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V 1.27 1.27 Collector to emitter voltag
8.7. Size:37K panasonic
2sb1036.pdf
Transistor 2SB1036 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Low noise voltage NV. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V 1.27 1.27 Collector to emitter voltag
8.8. Size:36K hitachi
2sb1032.pdf
2SB1032(K) Silicon PNP Triple Diffused Application Power switching complementary pair with 2SD1436(K) Outline TO-3P 2 1 1. Base ID 2. Collector (Flange) 3. Emitter 1.0 k 200 (Typ) (Typ) 1 3 2 3 2SB1032(K) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base
8.11. Size:69K wingshing
2sb1033.pdf
2SB1033 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SD1437 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -60 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25 PC 40 W Ju
8.12. Size:156K jmnic
2sb1033.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1033 DESCRIPTION With TO-220 package Complement to type 2SD1437 APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMET
8.13. Size:148K jmnic
2sb1034.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1034 DESCRIPTION With TO-126 package Low collector saturation voltage High DC current gain DARLINGTON APPLICATIONS For power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS V
8.14. Size:203K jmnic
2sb1037.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SB1037 DESCRIPTION With TO-220 package High allowable collector dissipation. Complement to type 2SD1459 APPLICATIONS For color TV vertical output, sound output applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PA
8.15. Size:217K inchange semiconductor
2sb1033.pdf
isc Silicon PNP Power Transistor 2SB1033 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min.) (BR)CEO Low Collector Saturation Voltage V = -1.5V(Max)@I = -2A CE(sat) C Complement to Type 2SD1437 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MA
8.16. Size:208K inchange semiconductor
2sb1034.pdf
isc Silicon PNP Darlington Power Transistor 2SB1034 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = -1A FE C Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -1.5V(Max)@ I = -1A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general
8.17. Size:194K inchange semiconductor
2sb1032.pdf
isc Silicon PNP Darlington Power Transistor 2SB1032 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -5A FE C Collector-Emitter Sustaining Voltage- V = -120V(Min) (BR)CEO Complement to Type 2SD1436 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMU
8.18. Size:216K inchange semiconductor
2sb1037.pdf
isc Silicon PNP Power Transistor 2SB1037 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min.) (BR)CEO Wide Area of Safe Operation Complement to Type 2SD1459 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV vertical output, sound output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM
8.19. Size:218K inchange semiconductor
2sb1031.pdf
isc Silicon PNP Darlington Power Transistor 2SB1031 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -8A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Complement to Type 2SD1435 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIM
Otros transistores... 2SB1032K
, 2SB1033
, 2SB1034
, 2SB1035
, 2SB1036
, 2SB1037
, 2SB1037Q
, 2SB1037R
, TIP31
, 2SB1039
, 2SB104
, 2SB1040
, 2SB1041
, 2SB1042
, 2SB1043
, 2SB1044
, 2SB1045
.
History: ZT92
| BDT29C
| 2N5691
| 2N1703
| 2SA1537
| ZT3440
| ZT60
