2SB1049 Todos los transistores

 

2SB1049 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB1049
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.4 W
   Tensión colector-base (Vcb): 30 V
   Tensión emisor-base (Veb): 18 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: TO92

 Búsqueda de reemplazo de transistor bipolar 2SB1049

 

2SB1049 Datasheet (PDF)

 8.1. Size:31K  hitachi
2sb1048.pdf

2SB1049
2SB1049

2SB1048Silicon PNP Epitaxial, DarlingtonApplicationHigh gain amplifierOutlineUPAK12 2,43141. Base2. Collector3. Emitter4. Collector (Flange)32SB1048Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7 VCollector current IC 1 A

 8.2. Size:47K  hitachi
2sb1046.pdf

2SB1049

 8.3. Size:873K  kexin
2sb1048.pdf

2SB1049
2SB1049

SMD Type TransistorsPNP Transistors2SB1048SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-1A Collector Emitter Voltage VCEO=-60V High gain amplifier0.42 0.10.46 0.1C1.Base2.CollectorB3.EmitterE Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage V

 8.4. Size:343K  kexin
2sb1046.pdf

2SB1049

SMD Type TransistorsPNP Transistors2SB1046SOT-89Unit:mm Features1.70 0.1 Collector Current Capability IC=-50mA Collector Emitter Voltage VCEO=-160V Complementary to 2SD14640.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Emitter Voltage V

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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