2SB1061. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2SB1061 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB1061

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 15 W

Tensión colector-base (Vcb): 300 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.3 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 1.5

Encapsulados: TO220

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2SB1061 datasheet

..1. Size:411K hitachi
2sb1061.pdf pdf_icon

8.1. Size:185K toshiba
2sb1067.pdf pdf_icon

8.2. Size:150K nec
2sb1068.pdf pdf_icon

8.3. Size:46K rohm
2sb1066m 2sb1243.pdf pdf_icon

8.4. Size:39K rohm
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8.5. Size:39K rohm
2sb1065.pdf pdf_icon

8.6. Size:67K panasonic
2sb1063.pdf pdf_icon

8.7. Size:57K no
2sb1062.pdf pdf_icon

8.8. Size:78K secos
2sb1068.pdf pdf_icon

2SB1068 -2A , -20V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES G H Low Collector Saturation Voltage High DC Current Gain Emitter Collector High Collector Power Dissipation Base J Complementary of the 2SD1513 A D Millimeter REF. Min

8.9. Size:159K jmnic
2sb1063.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB1063 DESCRIPTION With TO-220Fa package Complement to type 2SD1499 Wide area of safe operation High fT APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-b

8.10. Size:149K jmnic
2sb1064.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB1064 DESCRIPTION With TO-220 package Complement to type 2SD1505 Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base

8.11. Size:160K jmnic
2sb1069 2sb1069a.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB1069 2SB1069A DESCRIPTION With TO-220 package High speed switching Low collector saturation voltage APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratin

8.12. Size:154K jmnic
2sb1065.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB1065 DESCRIPTION With TO-126 package Complement to type 2SD1506 Low collector saturation voltage APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMET

8.13. Size:219K inchange semiconductor
2sb1063.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1063 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Max)@I = -3A CE(sat) C Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD1499 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplification. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

8.14. Size:217K inchange semiconductor
2sb1064.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1064 DESCRIPTION Low Collector Saturation Voltage V = -1.0V(Max)@I = -2A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1505 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P

8.15. Size:125K inchange semiconductor
2sb1069 2sb1069a.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1069 2SB1069A DESCRIPTION With TO-220 package High speed switching Low collector saturation voltage APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absol

8.16. Size:215K inchange semiconductor
2sb1065.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1065 DESCRIPTION Collector Saturation Voltage Low V = -1.0V(Max)@I = -2A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1506 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

8.17. Size:216K inchange semiconductor
2sb1069.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1069 DESCRIPTION Low Collector Saturation Voltage V = -0.5V(Max)@I = -2A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

Otros transistores... 2SB1054 , 2SB1055 , 2SB1056 , 2SB1057 , 2SB1058 , 2SB1059 , 2SB106 , 2SB1060 , 2SC2240 , 2SB1062 , 2SB1063 , 2SB1064 , 2SB1065 , 2SB1066 , 2SB1067 , 2SB1068 , 2SB1069 .