2SB1070 Todos los transistores

 ..1. Size:93K  panasonic
 2sb1070.pdf

Power Transistors 2SB1070, 2SB1070A Silicon PNP epitaxial planar type For low-voltage switching Unit mm 8.5 0.2 3.4 0.3 6.0 0.2 1.0 0.1 Features Low collector-emitter saturation voltage VCE(sat) High-speed switching N type package enabling direct soldering of the radiating fin to the 0 to 0.4 printed circuit board, etc. of small electronic equipment R = 0.5 0.

 ..2. Size:968K  kexin
 2sb1070.pdf

SMD Type Transistors PNP Transistors 2SB1070 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 Features +0.2 5.30-0.2 +0.8 0.50 -0.7 Low collector-emitter saturation voltage VCE(sat). High-speed switching. 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

 0.1. Size:968K  kexin
 2sb1070a.pdf

SMD Type Transistors PNP Transistors 2SB1070A TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 Features +0.2 5.30-0.2 +0.8 0.50 -0.7 Low collector-emitter saturation voltage VCE(sat). High-speed switching. 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Ratin

 8.1. Size:42K  rohm
 2sb1076m 2sb1239.pdf

 8.2. Size:196K  mcc
 2sb1073r-q.pdf

MCC Micro Commercial Components TM 2SB1073-Q 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SB1073-R Phone (818) 701-4933 Fax (818) 701-4939 Features Low collector to emitter saturation voltage VCE(sat) Silicon Large peak collector current ICP PNP epitaxial planer Mini power type package Lead Free Finish/RoHS Compliant ("P" Suffix desi

 8.3. Size:93K  panasonic
 2sb1071.pdf

Power Transistors 2SB1071, 2SB1071A Silicon PNP epitaxial planar type For low-voltage switching Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Low collector-emitter saturation voltage VCE(sat) 3.1 0.1 High-speed switching Full-pack package which can be installed to the heat sink with one screw Absolute Maximum Ratings TC = 25 C 1.3 0.2 1.4 0.1 Pa

 8.4. Size:35K  panasonic
 2sb1073 e.pdf

Transistor 2SB1073 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Large peak collector current ICP. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 0.4 0.08 0.4

 8.5. Size:35K  panasonic
 2sb1073.pdf

Transistor 2SB1073 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Large peak collector current ICP. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 0.4 0.08 0.4

 8.6. Size:421K  hitachi
 2sb1077.pdf

 8.7. Size:154K  hitachi
 2sb1078-k.pdf

2SB1078(K) PCB 24 2SB1078(K) Silicon PNP Epitaxial Application Low frequency power amplifier Outline Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7 V Collector current IC 8 A Collector

 8.8. Size:36K  hitachi
 2sb1079.pdf

2SB1079 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary pair with 2SD1559 Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter 1 k 400 (Typ) (Typ) 1 3 2 3 2SB1079 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V Emitter to base

 8.9. Size:35K  hitachi
 2sb1072.pdf

2SB1072(L), 2SB1072(S) Silicon PNP Triple Diffused Application Medium speed power amplifier Outline DPAK 4 2, 4 4 1 1 2 ID 1. Base 3 2. Collector 3. Emitter S Type 12 3 k 0.4 k 4. Collector 3 (Typ) (Typ) L Type 3 2SB1072(L), 2SB1072(S) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 100 V Collector to emitter volt

 8.10. Size:581K  jiangsu
 2sb1073.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1073 TRANSISTOR (PNP) 1. BASE FEATURES Low collector-emitter saturation voltage VCE(sat) 2. COLLECTOR 1 Large peak collector current IC 2 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3 Symbol Parameter Value Unit VCBO -30 V Collector-Base V

 8.11. Size:154K  jmnic
 2sb1075.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1075 DESCRIPTION With TO-126 package High collector-peak current Low collector saturation voltage APPLICATIONS For audio frequency output amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER

 8.12. Size:164K  jmnic
 2sb1071 2sb1071a.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1071 2SB1071A DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching APPLICATIONS For low voltage switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SB1071 -40 VCBO C

 8.13. Size:248K  htsemi
 2sb1073.pdf

2SB1 07 3 TRANSISTOR FEATURES Low collector-emitter saturation voltage VCE(sat) Large peak collector current IC MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -30 V Collector-Base Voltage VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -7 V IC Collector Current -Continuous -4 A PC Collector Power Dissipation 0.5 W TJ

 8.14. Size:199K  lge
 2sb1073.pdf

2SB1073 SOT-89 Transistor(PNP) 1. BASE 2. COLLECTOR SOT-89 1 4.6 B 4.4 2 1.6 3. EMITTER 1.8 1.4 1.4 3 Features 2.6 4.25 2.4 3.75 Low collector-emitter saturation voltage VCE(sat) 0.8 MIN 0.53 Large peak collector current IC 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.0 Dimensions in inches and (mil

 8.15. Size:312K  willas
 2sb1073.pdf

FM120-M WILLAS THRU 2SB1073 SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers TRANSISTOR r reverse leakage current and thermal resistance. (PNP) bette SOD-123H SOT-89 Lo FEATURES w profile s

 8.16. Size:716K  kexin
 2sb1073.pdf

SMD Type Transistors PNP Transistors 2SB1073 Features 1.70 0.1 Low collector to emitter saturation voltage VCE(sat). Large peak collector current ICP. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage VE

 8.17. Size:214K  inchange semiconductor
 2sb1075.pdf

isc Silicon PNP Power Transistor 2SB1075 DESCRIPTION High Collector Current -I = -2A C Collector-Emitter Breakdown Voltage- V = -40V(Min.) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage V = -1.0V(Max.)@ I = -3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF output amplifier

 8.18. Size:217K  inchange semiconductor
 2sb1071.pdf

isc Silicon PNP Power Transistor 2SB1071 DESCRIPTION Low Collector Saturation Voltage- V = -0.5V(Max)@I = -2A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag

 8.19. Size:196K  inchange semiconductor
 2sb1077.pdf

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB1077 DESCRIPTION Silicon NPN triple diffused Low Collector-Emitter Saturation Voltage Complement to Type 2SD1558 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER V

 8.20. Size:130K  inchange semiconductor
 2sb1071 2sb1071a.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1071 2SB1071A DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching APPLICATIONS For low voltage switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2S

 8.21. Size:203K  inchange semiconductor
 2sb1079.pdf

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB1079 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -10A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Complement to Type 2SD1559 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier appl