2SB108 Todos los transistores

 0.1. Size:33K  rohm
 2sb1085a.pdf

 0.2. Size:157K  jmnic
 2sb1085a.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1085A DESCRIPTION With TO-220 package Complement to type 2SD1562A Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-220) and symbo

 0.3. Size:157K  jmnic
 2sb1085.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1085 DESCRIPTION With TO-220 package Complement to type 2SD1562 Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol

 0.4. Size:146K  jmnic
 2sb1086a.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1086A DESCRIPTION With TO-126 package Complement to type 2SD1563A Low collector saturation voltage Large current capability APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute ma

 0.5. Size:146K  jmnic
 2sb1086.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1086 DESCRIPTION With TO-126 package Complement to type 2SD1563 Low collector saturation voltage Large current capability APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maxi

 0.6. Size:146K  jmnic
 2sb1087.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1087 DESCRIPTION With TO-220C package High DC current gain DARLINGTON APPLICATIONS For low frequency power amplifier and low speed power switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER COND

 0.7. Size:123K  inchange semiconductor
 2sb1085a.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1085A DESCRIPTION With TO-220 package Complement to type 2SD1562A Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (

 0.8. Size:216K  inchange semiconductor
 2sb1085.pdf

isc Silicon PNP Power Transistor 2SB1085 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SD1562 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

 0.9. Size:115K  inchange semiconductor
 2sb1086a.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1086A DESCRIPTION With TO-126 package Complement to type 2SD1563A Low collector saturation voltage Large current capability APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3

 0.10. Size:215K  inchange semiconductor
 2sb1086.pdf

isc Silicon PNP Power Transistor 2SB1086 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SD1563 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

 0.11. Size:218K  inchange semiconductor
 2sb1087.pdf

isc Silicon PNP Darlington Power Transistor 2SB1087 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain- h = 2000(Min)@ (V = -2V, I = -2A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers and low speed switching applications. ABSOLU

 0.12. Size:218K  inchange semiconductor
 2sb1089.pdf

isc Silicon PNP Power Transistor 2SB1089 DESCRIPTION High Collector Current I = -3A C Low Collector Saturation Voltage V = -1.5V(Max)@I = -2A CE(sat) C Complement to Type 2SD1567 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power supplies or a variety of drives in audio and other equipment. ABSOLUTE MAXIM