2SB1089 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon PNP Power Transistor 2SB1089DESCRIPTIONHigh Collector Current:: I = -3ACLow Collector Saturation Voltage: V = -1.5V(Max)@I = -2ACE(sat) CComplement to Type 2SD1567Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power supplies or a variety of drives in audioand other equipment.ABSOLUTE MAXIM

JMnic Product Specification Silicon PNP Power Transistors 2SB1085A DESCRIPTION With TO-220 package Complement to type 2SD1562A Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-220) and symbo

JMnic Product Specification Silicon PNP Power Transistors 2SB1085 DESCRIPTION With TO-220 package Complement to type 2SD1562 Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol

JMnic Product Specification Silicon PNP Power Transistors 2SB1086A DESCRIPTION With TO-126 package Complement to type 2SD1563A Low collector saturation voltage Large current capability APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute ma

JMnic Product Specification Silicon PNP Power Transistors 2SB1086 DESCRIPTION With TO-126 package Complement to type 2SD1563 Low collector saturation voltage Large current capability APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maxi

JMnic Product SpecificationSilicon PNP Power Transistors 2SB1087 DESCRIPTION With TO-220C package High DC current gain DARLINGTON APPLICATIONS For low frequency power amplifier and low speed power switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER COND

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1085A DESCRIPTION With TO-220 package Complement to type 2SD1562A Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (

isc Silicon PNP Power Transistor 2SB1085DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SD1562Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1086A DESCRIPTION With TO-126 package Complement to type 2SD1563A Low collector saturation voltage Large current capability APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3

isc Silicon PNP Power Transistor 2SB1086DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SD1563Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

isc Silicon PNP Darlington Power Transistor 2SB1087DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = -2V, I = -2A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers and low speedswitching applications.ABSOLU