2SB1096 Todos los transistores

 ..1. Size:30K  no
 2sb1096.pdf

 ..2. Size:162K  jmnic
 2sb1096.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1096 DESCRIPTION With TO-220Fa package High breakdown voltage Complement to type 2SD1587 APPLICATIONS For TV vertical output applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open em

 ..3. Size:217K  inchange semiconductor
 2sb1096.pdf

isc Silicon PNP Power Transistor 2SB1096 DESCRIPTION High Collector Current I = -2A C Good Linearity of h FE Complement to Type 2SD1587 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector

 8.1. Size:125K  nec
 2sb1093.pdf

 8.2. Size:120K  nec
 2sb1094.pdf

DATA SHEET SILICON POWER TRANSISTOR 2SB1094 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIER FEATURES PACKAGE DRAWING (UNIT mm) The 2SB1094 features ratings covering a wide range of applications and is ideal for power supplies or a variety of drives in audio and other equipment. VCEO -60 V, VEBO -7.0 V, IC(DC) -3.0 A Mold package that does not r

 8.3. Size:135K  nec
 2sb1097.pdf

DATA SHEET SILICON POWER TRANSISTOR 2SB1097 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT mm) Mold package that does not require an insulating board or insulation bushing Large current capacity in small dimension IC(DC) = 7 A Low collector saturation voltage VCE(sat) = -0.5 V MAX. (@ -5 A)

 8.4. Size:35K  hitachi
 2sb1091.pdf

2SB1091 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 1 3. Emitter 3.5 k 2 3 (Typ) 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7 V Collector current IC 8 A Col

 8.5. Size:160K  jmnic
 2sb1094.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1094 DESCRIPTION With TO-220Fa package Complement to type 2SD1585 APPLICATIONS Ideal for power supplies or variety or in audio and other equipment PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage

 8.6. Size:154K  jmnic
 2sb1098.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1098 DESCRIPTION With TO-220F package Complement to type 2SD1589 DARLINGTON High DC current gain APPLICATIONS Low speed switching industrial use Low frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Base Absolute maximum ratin

 8.7. Size:159K  jmnic
 2sb1097.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1097 DESCRIPTION With TO-220Fa package Low collector saturation voltage Complement to type 2SD1588 APPLICATIONS For low frequency power amplifier and low speed switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS

 8.8. Size:219K  inchange semiconductor
 2sb1094.pdf

isc Silicon PNP Power Transistor 2SB1094 DESCRIPTION High Collector Current I = -3A C Low Collector Saturation Voltage V = -1.5V(Max)@I = -2A CE(sat) C Complement to Type 2SD1585 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power supplies or a variety of drives in audio and other equipment. ABSOLUTE MAXIM

 8.9. Size:215K  inchange semiconductor
 2sb1098.pdf

isc Silicon PNP Darlington Power Transistor 2SB1098 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain- h =2000(Min)@ (V = -2V, I = -3A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low speed switching industrial Low frequency power amplifier ABSOLUTE MAXIMUM RATINGS(T

 8.10. Size:218K  inchange semiconductor
 2sb1095.pdf

isc Silicon PNP Power Transistor 2SB1095 DESCRIPTION High Collector Current I = -4A C Low Collector Saturation Voltage V = -1.5V(Max)@I = -3A CE(sat) C Complement to Type 2SD1586 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power supplies or a variety of drives in audio and other equipment. ABSOLUTE MAXIM

 8.11. Size:217K  inchange semiconductor
 2sb1097.pdf

isc Silicon PNP Power Transistor 2SB1097 DESCRIPTION High Collector Current I = -7A C Low Collector Saturation Voltage V = -0.5V(Max)@I = -5A CE(sat) C Complement to Type 2SD1588 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power amplifiers and low speed switching applications. ABSOLUTE MAXI

 8.12. Size:217K  inchange semiconductor
 2sb1090.pdf

isc Silicon PNP Power Transistor 2SB1090 DESCRIPTION High Collector Current I = -4A C Low Collector Saturation Voltage V = -1.5V(Max)@I = -3A CE(sat) C Complement to Type 2SD1568 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power supplies or a variety of drives in audio and other equipment. ABSOLUTE MAXIM