2SB1096 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB1096
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25 W
Tensión colector-base (Vcb): 200 V
Tensión colector-emisor (Vce): 200 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 2.5 MHz
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar 2SB1096
2SB1096 Datasheet (PDF)
2sb1096.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1096 DESCRIPTION With TO-220Fa package High breakdown voltage Complement to type 2SD1587 APPLICATIONS For TV vertical output applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open em
2sb1096.pdf
isc Silicon PNP Power Transistor 2SB1096DESCRIPTIONHigh Collector Current:: I = -2ACGood Linearity of hFEComplement to Type 2SD1587Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV vertical deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector
2sb1094.pdf
DATA SHEETSILICON POWER TRANSISTOR2SB1094PNP SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERFEATURES PACKAGE DRAWING (UNIT: mm) The 2SB1094 features ratings covering a wide range ofapplications and is ideal for power supplies or a variety of drivesin audio and other equipment.:VCEO -60 V, VEBO -7.0 V, IC(DC) -3.0 A Mold package that does not r
2sb1097.pdf
DATA SHEETSILICON POWER TRANSISTOR2SB1097PNP SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) Mold package that does not require an insulating board orinsulation bushing Large current capacity in small dimension: IC(DC) = 7 A Low collector saturation voltage: VCE(sat) = -0.5 V MAX. (@ -5 A)
2sb1091.pdf
2SB1091Silicon PNP Triple DiffusedApplicationLow frequency power amplifierOutlineTO-220AB211. Base2. Collector(Flange)13. Emitter 3.5 k23(Typ)3Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7 VCollector current IC 8 ACol
2sb1094.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1094 DESCRIPTION With TO-220Fa package Complement to type 2SD1585 APPLICATIONS Ideal for power supplies or variety or in audio and other equipment PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage
2sb1098.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1098 DESCRIPTION With TO-220F package Complement to type 2SD1589 DARLINGTON High DC current gain APPLICATIONS Low speed switching industrial use Low frequency power amplifier PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 BaseAbsolute maximum ratin
2sb1097.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1097 DESCRIPTION With TO-220Fa package Low collector saturation voltage Complement to type 2SD1588 APPLICATIONS For low frequency power amplifier and low speed switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS
2sb1094.pdf
isc Silicon PNP Power Transistor 2SB1094DESCRIPTIONHigh Collector Current:: I = -3ACLow Collector Saturation Voltage: V = -1.5V(Max)@I = -2ACE(sat) CComplement to Type 2SD1585Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power supplies or a variety of drives in audioand other equipment.ABSOLUTE MAXIM
2sb1098.pdf
isc Silicon PNP Darlington Power Transistor 2SB1098DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h =2000(Min)@ (V = -2V, I = -3A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow speed switching industrialLow frequency power amplifierABSOLUTE MAXIMUM RATINGS(T
2sb1095.pdf
isc Silicon PNP Power Transistor 2SB1095DESCRIPTIONHigh Collector Current:: I = -4ACLow Collector Saturation Voltage: V = -1.5V(Max)@I = -3ACE(sat) CComplement to Type 2SD1586Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power supplies or a variety of drives in audioand other equipment.ABSOLUTE MAXIM
2sb1097.pdf
isc Silicon PNP Power Transistor 2SB1097DESCRIPTIONHigh Collector Current:: I = -7ACLow Collector Saturation Voltage: V = -0.5V(Max)@I = -5ACE(sat) CComplement to Type 2SD1588Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power amplifiers and low speedswitching applications.ABSOLUTE MAXI
2sb1090.pdf
isc Silicon PNP Power Transistor 2SB1090DESCRIPTIONHigh Collector Current:: I = -4ACLow Collector Saturation Voltage: V = -1.5V(Max)@I = -3ACE(sat) CComplement to Type 2SD1568Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power supplies or a variety of drives in audioand other equipment.ABSOLUTE MAXIM
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050