2SB1102 Todos los transistores

 ..1. Size:404K  hitachi
 2sb1101 2sb1102.pdf

 ..2. Size:150K  jmnic
 2sb1102.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1102 DESCRIPTION With TO-220 package Complement to type 2SD1602 DARLINGTON High DC current gain APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute max

 ..3. Size:213K  inchange semiconductor
 2sb1102.pdf

isc Silicon PNP Darlington Power Transistor 2SB1102 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -2A) FE CE C Complement to Type 2SD1602 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. AB

 8.1. Size:104K  panasonic
 2sb1108.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.2. Size:36K  hitachi
 2sb1103.pdf

2SB1103 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1. Base ID 2. Collector (Flange) 1 3. Emitter 4.0 k 200 2 3 (Typ) (Typ) 3 2SB1103 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to emitter voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7 V C

 8.3. Size:389K  hitachi
 2sb1109 2sb1110.pdf

 8.4. Size:152K  jmnic
 2sb1103.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1103 DESCRIPTION With TO-220C package DARLINGTON High DC durrent gain Low collector saturation voltage Complement to type 2SD1603 APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Abs

 8.5. Size:156K  jmnic
 2sb1101.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1101 DESCRIPTION With TO-220 package Complement to type 2SD1601 DARLINGTON High DC current gain APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute max

 8.6. Size:147K  jmnic
 2sb1105.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1105 DESCRIPTION With TO-220C package DARLINGTON High DC durrent gain Complement to type 2SD1605 APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Tc=25 ) SYMB

 8.7. Size:155K  jmnic
 2sb1106.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1106 DESCRIPTION With TO-220C package DARLINGTON High DC durrent gain Complement to type 2SD1606 APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Tc=25 ) SYMB

 8.8. Size:214K  inchange semiconductor
 2sb1103.pdf

 8.9. Size:218K  inchange semiconductor
 2sb1100.pdf

isc Silicon PNP Darlington Power Transistor 2SB1100 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ I = -10A FE C Complement to Type 2SD1591 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed high current

 8.10. Size:213K  inchange semiconductor
 2sb1101.pdf

isc Silicon PNP Darlington Power Transistor 2SB1101 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -2A) FE CE C Complement to Type 2SD1601 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. AB

 8.11. Size:213K  inchange semiconductor
 2sb1105.pdf

isc Silicon PNP Darlington Power Transistor 2SB1105 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -1.5A) FE CE C Complement to Type 2SD1605 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications.

 8.12. Size:214K  inchange semiconductor
 2sb1106.pdf