2SB1102 Todos los transistores

 

2SB1102 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB1102
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 1000
   Paquete / Cubierta: TO220
 

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2SB1102 Datasheet (PDF)

 ..1. Size:404K  hitachi
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2SB1102

 ..2. Size:150K  jmnic
2sb1102.pdf pdf_icon

2SB1102

JMnic Product Specification Silicon PNP Power Transistors 2SB1102 DESCRIPTION With TO-220 package Complement to type 2SD1602 DARLINGTON High DC current gain APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute max

 ..3. Size:213K  inchange semiconductor
2sb1102.pdf pdf_icon

2SB1102

isc Silicon PNP Darlington Power Transistor 2SB1102DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -2A)FE CE CComplement to Type 2SD1602Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.AB

 8.1. Size:104K  panasonic
2sb1108.pdf pdf_icon

2SB1102

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Otros transistores... 2SB1097 , 2SB1098 , 2SB1099 , 2SB109A , 2SB109B , 2SB110 , 2SB1100 , 2SB1101 , 13003 , 2SB1103 , 2SB1104 , 2SB1105 , 2SB1106 , 2SB1107 , 2SB1108 , 2SB1109 , 2SB1109B .

History: C2655B | 2N1592 | BDX69B | BFQ30

 

 
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