2SB1106 Todos los transistores

 

2SB1106 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB1106
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 120 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 6 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 1000
   Paquete / Cubierta: TO220
 

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2SB1106 Datasheet (PDF)

 ..1. Size:155K  jmnic
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2SB1106

JMnic Product SpecificationSilicon PNP Power Transistors 2SB1106 DESCRIPTION With TO-220C package DARLINGTON High DC durrent gain Complement to type 2SD1606 APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Tc=25) SYMB

 ..2. Size:214K  inchange semiconductor
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2SB1106

isc Silicon PNP Darlington Power Transistor 2SB1106DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh DC Current Gain-: h =1000(Min)@ (V = -3V, I = -3A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RATINGS(T =25

 8.1. Size:104K  panasonic
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2SB1106

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.2. Size:404K  hitachi
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2SB1106

Otros transistores... 2SB109B , 2SB110 , 2SB1100 , 2SB1101 , 2SB1102 , 2SB1103 , 2SB1104 , 2SB1105 , 2SC2073 , 2SB1107 , 2SB1108 , 2SB1109 , 2SB1109B , 2SB1109C , 2SB1109D , 2SB111 , 2SB1110 .

History: KSR2206

 

 
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