2SB111 Todos los transistores

DATA SHEET SILICON TRANSISTORS 2SB1116, 1116A PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT mm) Low VCE(sat) VCE(sat) = -0.20 V TYP. (IC = -1.0 A, IB = -50 mA) High PT in small dimension with general-purpose PT = 0.75 W, VCEO = -50/-60 V, IC(DC) = -1.0 A Complementary transistor with 2SD1616 and

UNISONIC TECHNOLOGIES CO., LTD 2SB1116/A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION Complement to UTC 2SD1616/A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 - 2SB1116G-x-AB3-B SOT-89 B C E Tape Reel 2SB1116L-x-T92-B 2SB1116G-x-T92-B TO-92 E C B Tape Box 2SB1116L-x-T92-K 2SB1116G-x-T92-K TO-

2SB1119/2SD1619 PNP Silicon Elektronische Bauelemente Medium Power Transistor RoHS Compliant Product D D1 A SOT-89 b1 FEATURES b Power dissipation C e e1 P 500mW Tamb=25 CM 1.BASE Collector current 2.COLLECTOR Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max -1 A ICM 3.EMITTER A 1.400 1.600 0.055 0.063 Collector-base vol

2SB1116A -1 A, -80 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High Collector Power Dissipation G H Complementary to 2SD1616A 1Emitter 1 1 1 2Collector 2 2 2 3Base 3 3 3 CLASSIFICATION OF hFE(1) J A D Product-Rank 2SB1116A-L 2SB1116A-K 2SB1116A-U

2SB1116 -1A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES High current surface mount PNP silicon switching transistor A for Load management in portable applications L 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 2 K E Product-Rank 2SB1116-L 2SB1116-K 2AB11

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2 SB1116 TRANSISTOR (PNP) FEATURES High Collector Power Dissipation Complementary to 2SD1616 MARKING 1116 MAXIMUM RATINGS (TA=25 unless otherwise noted) 1. BASE Parameter Value Unit 2. EMITTER Symbol 3. COLLECTOR -60 VCBO Collector-Base Voltage V -50 VCEO Collector-

Transistors 2SB1116A

2SB1 1 1 9 TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Small Flat Package LF Amplifier, Electronic Governor Applications 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -25 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1 A PC Collector Power

2SB1116/1116A(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High Collector Power Dissipation . Complementary to 2SD1616/2SD1616A MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Value Units Symbol Collector-Base Voltage 2SB1116 -60 VCBO V 2SB1116A -80 Collector-Emitter Voltage 2SB1116 -50 VCEO V 2SB1116A -60 -6

2SB1116/2SB1116A PNP General Purpose Transistor COLLECTOR 2 P b Lead(Pb)-Free 3 BASE 1 2 3 1 EMITTER TO-92 Maximum Ratings ( T =25 C unless otherwise noted) A Rating Symbol 1116 1116A Unit V Collector-Base Voltage CBO -60 -80 V V -50 Collector-Emitter Voltage CEO -60 V V EBO Emitter-Base Voltage -6.0 -6.0 V l 1000 Collector Current Continuous C mA THERMAL CHARACTE

SMD Type Transistors PNP Transistors 2SB1115 Features 1.70 0.1 Low VCE(sat) VCE(sat)=-0.2V at 1A Complementary to 2SD1615 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -6 Collector Current -

SMD Type Transistors PNP Transistors 2SB1115A Features 1.70 0.1 Low VCE(sat) VCE(sat)=-0.2V at 1A Complementary to 2SD1615A 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -60 V Emitter - Base Voltage VEBO -6 Collector Current

SMD Type Transistors PNP Transistors 2SB1119 Features 1.70 0.1 Very small size making it easy to provide high highdensity, small-sized hybrid IC s. Complementary to 2SD1619 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Voltage VCEO -25 V

SMD Type Transistors PNP Transistors 2SB1114 Features 1.70 0.1 High Dc current gain hFE=135 to 600 Low VCE(sat) VCE(sat)=-0.3V at 1.5A Complementary to 2SD1614 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -20 V Emitter -

SMD Type Transistors PNP Transistors 2SB1118 Features 1.70 0.1 Low collector-to-emitter saturation voltage. Very small size making it easy to provide high highdensity, small-sized hybrid IC s. 0.42 0.1 0.46 0.1 Complementary to 2SD1618 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage

2SB1114 PNP-Silicon General use Transistors 1W 1.5A 25V Applications Can be used for switching and amplifying in various 4 electrical and electronic circuit. 2 3 1 2 1 3 Maximum ratings SOT-89 Parameters Symbol Rating Unit V 1 Base 2/4 Collector 3 Emitter VCEO 25 Collector-emitter voltage (IB=0) VCBO 40 V Collector-base voltage IE=0 VEBO 6 V Emitter-bas