2SB1115A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SMD Type TransistorsPNP Transistors2SB1115A Features1.70 0.1 Low VCE(sat) VCE(sat)=-0.2V at 1A Complementary to 2SD1615A0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -60 V Emitter - Base Voltage VEBO -6 Collector Current

SMD Type TransistorsPNP Transistors2SB1115 Features1.70 0.1 Low VCE(sat) VCE(sat)=-0.2V at 1A Complementary to 2SD16150.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -6 Collector Current -

DATA SHEETSILICON TRANSISTORS2SB1116, 1116APNP SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) Low VCE(sat)VCE(sat) = -0.20 V TYP. (IC = -1.0 A, IB = -50 mA) High PT in small dimension with general-purposePT = 0.75 W, VCEO = -50/-60 V, IC(DC) = -1.0 A Complementary transistor with 2SD1616 and

UNISONIC TECHNOLOGIES CO., LTD 2SB1116/A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION Complement to UTC 2SD1616/A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3- 2SB1116G-x-AB3-B SOT-89 B C E Tape Reel2SB1116L-x-T92-B 2SB1116G-x-T92-B TO-92 E C B Tape Box2SB1116L-x-T92-K 2SB1116G-x-T92-K TO-

2SB1119/2SD1619PNP Silicon Elektronische BauelementeMedium Power TransistorRoHS Compliant ProductDD1ASOT-89b1FEATURES b Power dissipation Ce e1 P : 500mW Tamb=25 CM1.BASE Collector current 2.COLLECTOR Dimensions In Millimeters Dimensions In InchesSymbolMin Max Min Max: -1 AICM3.EMITTERA 1.400 1.600 0.055 0.063 Collector-base vol

2SB1116A -1 A, -80 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High Collector Power Dissipation G H Complementary to 2SD1616A 1Emitter 1112Collector 2223Base 333CLASSIFICATION OF hFE(1) JA DProduct-Rank 2SB1116A-L 2SB1116A-K 2SB1116A-U

2SB1116 -1A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES High current surface mount PNP silicon switching transistor Afor Load management in portable applications L33Top View C BCLASSIFICATION OF hFE 11 22K EProduct-Rank 2SB1116-L 2SB1116-K 2AB11

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT-23 2 SB1116 TRANSISTOR (PNP)FEATURES High Collector Power Dissipation Complementary to 2SD1616MARKING1116MAXIMUM RATINGS (TA=25 unless otherwise noted) 1. BASE Parameter Value Unit2. EMITTER Symbol 3. COLLECTOR-60VCBO Collector-Base Voltage V -50VCEO Collector-

Transistors2SB1116A

2SB1 1 1 9TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Small Flat Package LF Amplifier, Electronic Governor Applications 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -25 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1 A PC Collector Power

2SB1116/1116A(PNP)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High Collector Power Dissipation . Complementary to 2SD1616/2SD1616A MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Value UnitsSymbol Collector-Base Voltage 2SB1116 -60 VCBO V 2SB1116A -80 Collector-Emitter Voltage 2SB1116 -50 VCEO V 2SB1116A -60 -6

2SB1116/2SB1116APNP General Purpose TransistorCOLLECTOR2P b Lead(Pb)-Free3BASE1231EMITTERTO-92Maximum Ratings ( T =25 C unless otherwise noted)ARating Symbol 1116 1116A UnitVCollector-Base Voltage CBO -60 -80 VV -50Collector-Emitter Voltage CEO -60VVEBOEmitter-Base Voltage -6.0 -6.0 Vl 1000Collector Current Continuous C mATHERMAL CHARACTE

SMD Type TransistorsPNP Transistors2SB1119 Features1.70 0.1 Very small size making it easy to provide high highdensity, small-sized hybrid ICs. Complementary to 2SD16190.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Voltage VCEO -25 V

SMD Type TransistorsPNP Transistors2SB1114 Features 1.70 0.1 High Dc current gain hFE=135 to 600 Low VCE(sat) VCE(sat)=-0.3V at 1.5A Complementary to 2SD16140.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -20 V Emitter -

SMD Type TransistorsPNP Transistors2SB1118 Features 1.70 0.1 Low collector-to-emitter saturation voltage. Very small size making it easy to provide high highdensity, small-sized hybrid ICs.0.42 0.10.46 0.1 Complementary to 2SD16181.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage

2SB1114PNP-Silicon General use Transistors1W 1.5A25V ApplicationsCan be used for switching and amplifying in various 4 electrical and electronic circuit. 2 31 2 1 3Maximum ratings SOT-89 Parameters Symbol Rating UnitV 1 Base 2/4 Collector 3 EmitterVCEO 25Collector-emitter voltage (IB=0) VCBO 40 VCollector-base voltageIE=0 VEBO 6 VEmitter-bas