2SB1136. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2SB1136 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB1136

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 12 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 10 MHz

Ganancia de corriente contínua (hFE): 70

Encapsulados: TO220F

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2SB1136 datasheet

..1. Size:102K sanyo
2sb1136.pdf pdf_icon

..2. Size:221K jmnic
2sb1136.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB1136 DESCRIPTION With TO-220F package Complement to type 2SD1669 Low collector saturation voltage Wide ASO APPLICATIONS Relay drivers High speed inverters,converters General high current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-220F) and

..3. Size:199K inchange semiconductor
2sb1136.pdf pdf_icon

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1136 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO Low Collector Saturation Voltage- V = -0.4V(Max.)@ I = -6A CE(sat) C Complement to Type 2SD1669 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers,high-speed inver

8.1. Size:90K sanyo
2sb1131.pdf pdf_icon

Ordering number 2420B PNP Epitaxial Planar Silicon Transistor 2SB1131 Strobe, High-Current Switching Applications Applications Package Dimensions Strobes, power supplies, relay drivers, lamp drivers. unit mm 2006A Features [2SB1131] Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity. Fast switching time. EIAJ SC-51 B Base SANYO

8.2. Size:30K sanyo
2sb1133 2sd1666.pdf pdf_icon

Ordering number ENN3031A 2SB1133 / 2SD1666 PNP / NPN Triple Diffused Planar Silicon Transistors 2SB1133 / 2SD1666 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions Wide ASO(Adoption of MBIT process). unit mm Micaless package facilitating easy mounting. 2041A High reliability. [2SB1133 / 2SD1666] 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7

8.3. Size:99K sanyo
2sb1135.pdf pdf_icon

8.4. Size:123K sanyo
2sb1134.pdf pdf_icon

8.5. Size:40K rohm
2sb1130am.pdf pdf_icon

8.6. Size:173K rohm
2sb1132 2sa1515s 2sb1237.pdf pdf_icon

Medium Power Transistor ( 32V, 1A) 2SB1132 / 2SA1515S / 2SB1237 Features Dimensions (Unit mm) 1) Low VCE(sat). 2SB1132 2SA1515S VCE(sat) = 0.2V(Typ.) + + 4 0.2 2 0.2 - - 4.5 +0.2 -0.1 (IC / IB = 500mA / 50mA) 1.5 +0.2 + 1.6 0.1 -0.1 - 2) Compliments 2SD1664 / 2SD1858 (1) (2) (3) 0.45 +0.15 -0.05 0.4 +0.1 Structure -0.05 + + 0.5 0.1 0.

8.7. Size:123K rohm
2sb1132.pdf pdf_icon

Transistors Medium Power Transistor (*32V, *1A) 2SB1132 / 2SA1515S / 2SB1237 FFeatures FExternal dimensions (Units mm) 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = 500mA / 50mA) 2) Compliments 2SD1664 / 2SD1858. FStructure Epitaxial planar type PNP silicon transistor (96-120-B12) 207 Transistors 2SB1132 / 2SA1515S / 2SB1237 FAbsolute maximum ratings (Ta = 25_C)

8.8. Size:207K utc
2sb1132.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC / IB= -500mA / -50mA) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SB1132L-x-AB3-R 2SB1132G

8.9. Size:171K secos
2sb1132.pdf pdf_icon

2SB1132 -1A, -40V PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-89 Low power dissipation 0.5W 4 MARKING 1 2 3 1 1 3 2 A Date Code E C B D CLASSIFICATION OF hFE F G Product Rank 2SB1132-P 2SB1132-Q 2SB1132-R H K J L Range 82 180 120 270 180 390 Millim

8.10. Size:69K wingshing
2sb1133.pdf pdf_icon

2SB1133 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25 PC 20 W Junction Tem

8.11. Size:361K jiangsu
2sb1132.pdf pdf_icon

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1132 TRANSISTOR (PNP) SOT-89-3L FEATURES 1. BASE Low VCE(sat) Compliments 2SD1664 2. COLLECTOR 1 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V

8.12. Size:212K jmnic
2sb1135.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB1135 DESCRIPTION With TO-220F package Complement to type 2SD1668 Low collector saturation voltage Wide ASO APPLICATIONS Relay drivers High speed inverters;converters General high current switching application PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-220F) and

8.13. Size:188K jmnic
2sb1133.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB1133 DESCRIPTION With TO-220F package Complement to type 2SD1666 Low collector saturation voltage Wide area of safe operation APPLICATIONS For low-frequency and general-purpose amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter

8.14. Size:217K jmnic
2sb1134.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB1134 DESCRIPTION With TO-220F package Complement to type 2SD1667 Low collector saturation voltage APPLICATIONS Relay drivers,high-speed inverters and other general high-current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Ab

8.15. Size:1419K htsemi
2sb1132.pdf pdf_icon

2SB1 1 32 TRANSISTOR (PNP) FEATURES Low VCE(sat) -0.2V(Typ) IC/IB=-500mA/-50mA SOT-89 Compliments 2SD1664 MAXIMUM RATINGS (TA=25 unless otherwise noted) 1. BASE Symbol Parameter Value Units 2. COLLECTOR 1 VCBO Collector-Base Voltage -40 V 2 VCEO Collector-Emitter Voltage -32 V 3. EMITTER 3 VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1

8.16. Size:238K lge
2sb1132 sot-89.pdf pdf_icon

2SB1132 SOT-89 Transistor(PNP) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 1.6 1.8 2 1.4 3. EMITTER 1.4 3 2.6 4.25 2.4 3.75 Features 0.8 MIN Low VCE(sat) -0.2V(Typ) IC/IB=-500mA/-50mA 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 Compliments 2SD1664 0.37 1.5 3.0 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol

8.17. Size:335K wietron
2sb1132.pdf pdf_icon

2SB1132 PNP Plastic-Encapsulate Transistors SOT-89 1 2 1. BASE 3 2. COLLECTOR 3. EMITTER ABSOLUTE MAXIMUM RATINGS(Ta=25%C) Rating Unit Symbol Value -40 Vdc Collector-Emitter Voltage VCBO Vdc Collector-Base Voltage -32 VCEO Vdc Emitter-Base Voltage VEBO -5.0 IC A(DC) -1.0 Collector Current ICP -2.0 A (Pulse)* PC 0.5 Collector Power Dissipation W %C Storage Tempera

8.18. Size:540K willas
2sb1132.pdf pdf_icon

FM120-M WILLAS 2SB1132THRU SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features TRANSISTOR ocess design, excellent power dissipation offers (PNP) Batch pr bette SOD-123H FEATURES r reverse leakage current and thermal resistance. Low profile surface mount

8.19. Size:218K shenzhen
2sb1132.pdf pdf_icon

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-89 Plastic-Encapsulate Transistors SOT-89 2SB1132 TRANSISTOR (PNP) 1. BASE FEATURES Low VCE(sat) -0.2V(Typ) IC/IB=-500mA/-50mA 2. COLLECTOR 1 Compliments 2SD1664 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-

8.20. Size:1771K blue-rocket-elect
2sb1132.pdf pdf_icon

2SB1132 Rev.D Nov.-2015 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features , 2SD1664 Low VCE(sat),complements the 2SD1664. / Applications Medium power amplifier applications. / Equivalent Circui

8.21. Size:539K semtech
st2sb1132u.pdf pdf_icon

ST 2SB1132U PNP SILICON EPITAXIAL MEDIUM POWER TRANSISTOR Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 32 V Emitter Base Voltage -VEBO 5 V Collector Current - DC -IC 1 A Collector Current - Pulse 1) -ICP 2 A 0.5 Ptot W Total Power Dissipation 2 2) Junction Temperature TJ 150 Stora

8.22. Size:1255K kexin
2sb1132.pdf pdf_icon

SMD Type Transistors PNP Transistors 2SB1132 Features 1.70 0.1 Low VCE(sat) Compliments to 2SD1664 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5 V Collector Current (DC) -1 A IC Single pulse, PW=100ms -2 A Collector

8.23. Size:222K chenmko
2sb1132gp.pdf pdf_icon

CHENMKO ENTERPRISE CO.,LTD 2SB1132GP SURFACE MOUNT PNP Medium Power Transistor VOLTAGE 32 Volts CURRENT 1 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SC-62/SOT-89 * Small flat package. ( SC-62/SOT-89 ) * High current gain. * Suitable for high packing density. 4.6MAX. 1.6MAX. * Low colloector-emitter saturation.

8.24. Size:2765K slkor
2sb1132-p 2sb1132-q 2sb1132-r.pdf pdf_icon

2SB1132 PNP Transistors 3 Features 2 Low VCE(sat) 1.Base Compliments to 2SD1664 1 2.Collector 3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5 V Collector Current (DC) -1 A IC Single pulse, PW=100ms -2 A Collector Power Dis

8.25. Size:763K pjsemi
2sb1132sq-p 2sb1132sq-q 2sb1132sq-r.pdf pdf_icon

2SB1132SQ PNP Transistor Features SOT-89 Low saturation voltage 1. Base 2. Collector 3.Emitter Marking 1132P 1132Q 1132R Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -V 40 V CBO Collector Emitter Voltage -V 32 V CEO Emitter Base Voltage -V 5 V EBO Collector Current

8.26. Size:968K cn evvo
2sb1132-p 2sb1132-q 2sb1132-r.pdf pdf_icon

8.27. Size:1228K cn yongyutai
2sb1132p 2sb1132q 2sb1132r.pdf pdf_icon

2SB1132 2SB1132 TRANSISTOR (PNP) Features Compliments 2SD1664 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbl Parameter Value Unit V VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 1. BASE A IC Collector Current-Continuous -1 A I Collector Current -Pulsed CP -2 2. COLLECTOR mW PC Collec

8.28. Size:190K cn hottech
2sb1132.pdf pdf_icon

Plastic-Encapsulate Transistors FEATURES 2SB1132 (PNP) Low VCE(sat) -0.2V(Typ) IC/IB=-500mA/-50mA Compliments 2SD1664 Maximum Ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -40 V 1. BASE Collector-Emitter Voltage VCEO -32 V 2. COLLECTO SOT-89 Emitter-Base Voltage VEBO -5 V 3. EMITTER Collector Current -Continuous IC -1 A Coll

8.29. Size:213K inchange semiconductor
2sb1135.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1135 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO Low Collector Saturation Voltage- V = -0.4V(Max.)@ I = -4A CE(sat) C Complement to Type 2SD1668 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters, and other genera

8.30. Size:213K inchange semiconductor
2sb1133.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1133 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD1666 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency and general purpose amplifier applications. ABSOLUTE MAX

8.31. Size:214K inchange semiconductor
2sb1134.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1134 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO Low Collector Saturation Voltage- V = -0.4V(Max.)@ I = -3A CE(sat) C Complement to Type 2SD1667 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters, and other genera

Otros transistores... 2SB1134 , 2SB1134Q , 2SB1134R , 2SB1134S , 2SB1135 , 2SB1135Q , 2SB1135R , 2SB1135S , BC337 , 2SB1136Q , 2SB1136R , 2SB1136S , 2SB1137 , 2SB114 , 2SB1140 , 2SB1140R , 2SB1140S .