2SB1142T . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB1142T
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 2.5 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 140 MHz
Capacitancia de salida (Cc): 25 pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: TO126
Búsqueda de reemplazo de transistor bipolar 2SB1142T
2SB1142T Datasheet (PDF)
2sb1143 2sd1683.pdf
Ordering number:ENN2063APNP/NPN Epitaxial Planar Silicon Transistors2SB1143/2SD168350V/4A Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2042B[2SB1143/2SD1683]Features8.04.03.3 Adoption of FBET, MBIT processes. 1.0 1.0 Low saturation voltage. Large current capacity and
2sb1140.pdf
Ordering number:2069APNP Epitaxial Planar Silicon Transistor2SB114020V/5A Switching ApplicationsApplications Package Dimensions Strobes, power supplies, relay drivers, lamp drivers. unit:mm2042AFeatures [2SB1140] Adoption of FBET, MBIT processes. Low saturation voltage. Large current cpacity. Short switching time.B : BaseC : CollectorE : EmitterSANYO
2sb1148.pdf
Power Transistors2SB1148, 2SB1148ASilicon PNP epitaxial planar typeUnit: mmFor low-voltage switching 7.0 0.3 3.5 0.23.0 0.2Complementary to 2SD1752 and 2SD1752AFeaturesLow collector to emitter saturation voltage VCE(sat) 1.1 0.1 0.85 0.10.75 0.1 0.4 0.1High-speed switchingI type package enabling direct soldering of the radiating fin tothe printed circuit bo
2sb1145.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1145 DESCRIPTION With TO-220F package High DC current gain. DARLINGTON Low collector saturation voltage APPLICATIONS For high current driver and power driver applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta
2sb1149.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1149 DESCRIPTION With TO-126 package DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS For use in operating from IC without predriver ,such as hammer driver PINNING(See Fig.2) PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum r
2sb1144.pdf
isc Silicon PNP Power Transistor 2SB1144DESCRIPTION Collector Saturation VoltageLow: V = -0.3V(Max)@I = -0.5ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1684Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for 100V/1.5A Switching ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
2sb1145.pdf
isc Silicon PNP Darlingtion Power Transistor 2SB1145DESCRIPTIONHigh DC Current Gain-: h = 2000(Min.)@I = -1.5AFE CLow Collector Saturation Voltage-: V = -1.5V(Max)@I = -1.5ACE(sat) CGood Linearity of hFEWith TO-220F packageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current driver applications.Powe
2sb1149.pdf
isc Silicon PNP Darlingtion Power Transistor 2SB1149DESCRIPTIONHigh DC Current Gain-: h = 2000(Min.)@I = -1.5AFE CLow Collector Saturation Voltage-: V = -1.2V(Max)@I = -1.5ACE(sat) CGood Linearity of hFEWith TO-126 packageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSOperate from Ic without predriver applicat
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
