2SB1149 Todos los transistores

 ..1. Size:143K  nec
 2sb1149.pdf

 ..2. Size:154K  jmnic
 2sb1149.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1149 DESCRIPTION With TO-126 package DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS For use in operating from IC without predriver ,such as hammer driver PINNING(See Fig.2) PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum r

 ..3. Size:216K  inchange semiconductor
 2sb1149.pdf

isc Silicon PNP Darlingtion Power Transistor 2SB1149 DESCRIPTION High DC Current Gain- h = 2000(Min.)@I = -1.5A FE C Low Collector Saturation Voltage- V = -1.2V(Max)@I = -1.5A CE(sat) C Good Linearity of h FE With TO-126 package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Operate from Ic without predriver applicat

 8.1. Size:117K  sanyo
 2sb1141.pdf

 8.2. Size:60K  sanyo
 2sb1143 2sd1683.pdf

Ordering number ENN2063A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1143/2SD1683 50V/4A Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2042B [2SB1143/2SD1683] Features 8.0 4.0 3.3 Adoption of FBET, MBIT processes. 1.0 1.0 Low saturation voltage. Large current capacity and

 8.3. Size:126K  sanyo
 2sb1143.pdf

 8.4. Size:129K  sanyo
 2sb1142.pdf

 8.5. Size:102K  sanyo
 2sb1140.pdf

Ordering number 2069A PNP Epitaxial Planar Silicon Transistor 2SB1140 20V/5A Switching Applications Applications Package Dimensions Strobes, power supplies, relay drivers, lamp drivers. unit mm 2042A Features [2SB1140] Adoption of FBET, MBIT processes. Low saturation voltage. Large current cpacity. Short switching time. B Base C Collector E Emitter SANYO

 8.6. Size:130K  sanyo
 2sb1144.pdf

 8.7. Size:59K  panasonic
 2sb1148.pdf

Power Transistors 2SB1148, 2SB1148A Silicon PNP epitaxial planar type Unit mm For low-voltage switching 7.0 0.3 3.5 0.2 3.0 0.2 Complementary to 2SD1752 and 2SD1752A Features Low collector to emitter saturation voltage VCE(sat) 1.1 0.1 0.85 0.1 0.75 0.1 0.4 0.1 High-speed switching I type package enabling direct soldering of the radiating fin to the printed circuit bo

 8.8. Size:145K  jmnic
 2sb1145.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1145 DESCRIPTION With TO-220F package High DC current gain. DARLINGTON Low collector saturation voltage APPLICATIONS For high current driver and power driver applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta

 8.9. Size:213K  inchange semiconductor
 2sb1144.pdf

isc Silicon PNP Power Transistor 2SB1144 DESCRIPTION Collector Saturation Voltage Low V = -0.3V(Max)@I = -0.5A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1684 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for 100V/1.5A Switching Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

 8.10. Size:206K  inchange semiconductor
 2sb1145.pdf

isc Silicon PNP Darlingtion Power Transistor 2SB1145 DESCRIPTION High DC Current Gain- h = 2000(Min.)@I = -1.5A FE C Low Collector Saturation Voltage- V = -1.5V(Max)@I = -1.5A CE(sat) C Good Linearity of h FE With TO-220F package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current driver applications. Powe