2SB115 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB115
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1 W
Tensión colector-base (Vcb): 25 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 75 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 0.5 MHz
Capacitancia de salida (Cc): 30 pF
Ganancia de corriente contínua (hfe): 85
Paquete / Cubierta: TO5
Búsqueda de reemplazo de transistor bipolar 2SB115
2SB115 Datasheet (PDF)
2sb1154.pdf
Power Transistors2SB1154Silicon PNP epitaxial planar typeFor power switchingComplementary to 2SD1705 Unit: mmFeatures15.0 0.3 5.0 0.2Low collector to emitter saturation voltage VCE(sat)11.0 0.2 3.2Satisfactory linearity of foward current transfer ratio hFELarge collector current IC 3.2 0.1Full-pack package which can be installed to the heat sink withone screw
2sb1156.pdf
Power Transistors2SB1156Silicon PNP epitaxial planar typeFor power switchingComplementary to 2SD1707Unit: mmFeatures Low collector to emitter saturation voltage VCE(sat)15.0 0.3 5.0 0.211.0 0.2 3.2 Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 3.2 0.1 Full-pack package which can be installed to the heat sink withone
2sb1155.pdf
Power Transistors2SB1155Silicon PNP epitaxial planar typeFor power switchingComplementary to 2SD1706 Unit: mmFeatures15.0 0.3 5.0 0.2Low collector to emitter saturation voltage VCE(sat)11.0 0.2 3.2Satisfactory linearity of foward current transfer ratio hFELarge collector current IC 3.2 0.1Full-pack package which can be installed to the heat sink withone screw
2sb1151.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SB1151 PNP SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation *Complementary to 2SD1691 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SB1151L-x-AA3-R 2SB1151G-x-AA3-R SOT-223 E C B Tape Reel 2SB1151L-x-TA3-T 2SB1151G-x-TA3-T TO-220
2sb1157.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1157 DESCRIPTION With TO-3PFa package Complement to type 2SD1712 High fT Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-ba
2sb1159.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1159 DESCRIPTION With TO-3PFa package Complement to type 2SD1714 High fT Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-ba
2sb1154.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1154 DESCRIPTION With TO-3PFa package Complement to type 2SD1705 Low collector saturation voltage Satisfactory linearity of hFE APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE U
2sb1158.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1158 DESCRIPTION With TO-3PFa package Complement to type 2SD1713 High fT Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-ba
2sb1151.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1151 DESCRIPTION With TO-126 package Complement to type 2SD1691 Low saturation voltage Large current High total power dissipation:PT=1.3W Large current capability and wide SOA APPLICATIONS DC-DC converter Driver of solenoid or motor PINNING PIN DESCRIPTION1 Emitter Collector;connected to
2sb1156.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1156 DESCRIPTION With TO-3PFa package Complement to type 2SD1707 Low collector saturation voltage Large collector current APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITV
2sb1155.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1155 DESCRIPTION With TO-3PFa package Complement to type 2SD1706 Low collector saturation voltage Satisfactory linearity of hFE APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE U
st2sb1151t.pdf
ST 2SB1151T PNP Epitaxial Silicon Power Transistor ECBTO-126 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 60 VCollector Emitter Voltage -VCEO 60 VEmitter Base Voltage -VEBO 7 VCollector Current (DC) -IC 5 ACollector Current (PW = 10 ms) -ICP 8 ABase Current -IB 1 A OCollector Power Dissipation (a
2sb1152.pdf
isc Silicon PNP Power Transistor 2SB1152DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collec
2sb1153.pdf
isc Silicon PNP Power Transistor 2SB1153DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -170V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collec
2sb1157.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1157 DESCRIPTION With TO-3PFa package Complement to type 2SD1712 High fT Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT
2sb1159.pdf
isc Silicon PNP Power Transistor 2SB1159DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD1714Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)
2sb1154.pdf
isc Silicon PNP Power Transistor 2SB1154DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage-: V = -0.5V(Max.)@ I = -6ACE(sat) CComplement to Type 2SD1705Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching application
2sb1158.pdf
isc Silicon PNP Power Transistor 2SB1158DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD1713Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)
2sb1151.pdf
isc Silicon PNP Power Transistor 2SB1151DESCRIPTIONLarge Collector CurrentLow Collector Saturation VoltageHigh Power DissipationComplement to 2SD1691Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converter, or driver of solenoidor motor.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
2sb1156.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1156 DESCRIPTION With TO-3PFa package Complement to type 2SD1707 Low collector saturation voltage Large collector current APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITI
2sb1155.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1155 DESCRIPTION With TO-3PFa package Complement to type 2SD1706 Low collector saturation voltage Satisfactory linearity of hFE APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER C
Otros transistores... 2SB1144R , 2SB1144S , 2SB1144T , 2SB1145 , 2SB1146 , 2SB1147 , 2SB1148 , 2SB1149 , TIP2955 , 2SB1150 , 2SB1151 , 2SB1152 , 2SB1153 , 2SB1154 , 2SB1155 , 2SB1156 , 2SB1157 .