2SB1150 Todos los transistores

 

2SB1150 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB1150
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 10000
   Paquete / Cubierta: TO126
 
   - Selección ⓘ de transistores por parámetros

 

2SB1150 Datasheet (PDF)

 ..1. Size:146K  nec
2sb1150.pdf pdf_icon

2SB1150

 8.1. Size:150K  nec
2sb1151.pdf pdf_icon

2SB1150

 8.2. Size:61K  panasonic
2sb1154.pdf pdf_icon

2SB1150

Power Transistors2SB1154Silicon PNP epitaxial planar typeFor power switchingComplementary to 2SD1705 Unit: mmFeatures15.0 0.3 5.0 0.2Low collector to emitter saturation voltage VCE(sat)11.0 0.2 3.2Satisfactory linearity of foward current transfer ratio hFELarge collector current IC 3.2 0.1Full-pack package which can be installed to the heat sink withone screw

 8.3. Size:61K  panasonic
2sb1156.pdf pdf_icon

2SB1150

Power Transistors2SB1156Silicon PNP epitaxial planar typeFor power switchingComplementary to 2SD1707Unit: mmFeatures Low collector to emitter saturation voltage VCE(sat)15.0 0.3 5.0 0.211.0 0.2 3.2 Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 3.2 0.1 Full-pack package which can be installed to the heat sink withone

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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