2SB1150 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Power Transistors2SB1154Silicon PNP epitaxial planar typeFor power switchingComplementary to 2SD1705 Unit: mmFeatures15.0 0.3 5.0 0.2Low collector to emitter saturation voltage VCE(sat)11.0 0.2 3.2Satisfactory linearity of foward current transfer ratio hFELarge collector current IC 3.2 0.1Full-pack package which can be installed to the heat sink withone screw

Power Transistors2SB1156Silicon PNP epitaxial planar typeFor power switchingComplementary to 2SD1707Unit: mmFeatures Low collector to emitter saturation voltage VCE(sat)15.0 0.3 5.0 0.211.0 0.2 3.2 Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 3.2 0.1 Full-pack package which can be installed to the heat sink withone

Power Transistors2SB1155Silicon PNP epitaxial planar typeFor power switchingComplementary to 2SD1706 Unit: mmFeatures15.0 0.3 5.0 0.2Low collector to emitter saturation voltage VCE(sat)11.0 0.2 3.2Satisfactory linearity of foward current transfer ratio hFELarge collector current IC 3.2 0.1Full-pack package which can be installed to the heat sink withone screw

UNISONIC TECHNOLOGIES CO., LTD 2SB1151 PNP SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation *Complementary to 2SD1691 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SB1151L-x-AA3-R 2SB1151G-x-AA3-R SOT-223 E C B Tape Reel 2SB1151L-x-TA3-T 2SB1151G-x-TA3-T TO-220

JMnic Product Specification Silicon PNP Power Transistors 2SB1157 DESCRIPTION With TO-3PFa package Complement to type 2SD1712 High fT Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-ba

JMnic Product Specification Silicon PNP Power Transistors 2SB1159 DESCRIPTION With TO-3PFa package Complement to type 2SD1714 High fT Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-ba

JMnic Product Specification Silicon PNP Power Transistors 2SB1154 DESCRIPTION With TO-3PFa package Complement to type 2SD1705 Low collector saturation voltage Satisfactory linearity of hFE APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE U

JMnic Product Specification Silicon PNP Power Transistors 2SB1158 DESCRIPTION With TO-3PFa package Complement to type 2SD1713 High fT Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-ba

JMnic Product Specification Silicon PNP Power Transistors 2SB1151 DESCRIPTION With TO-126 package Complement to type 2SD1691 Low saturation voltage Large current High total power dissipation:PT=1.3W Large current capability and wide SOA APPLICATIONS DC-DC converter Driver of solenoid or motor PINNING PIN DESCRIPTION1 Emitter Collector;connected to

JMnic Product Specification Silicon PNP Power Transistors 2SB1156 DESCRIPTION With TO-3PFa package Complement to type 2SD1707 Low collector saturation voltage Large collector current APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITV

JMnic Product Specification Silicon PNP Power Transistors 2SB1155 DESCRIPTION With TO-3PFa package Complement to type 2SD1706 Low collector saturation voltage Satisfactory linearity of hFE APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE U

ST 2SB1151T PNP Epitaxial Silicon Power Transistor ECBTO-126 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 60 VCollector Emitter Voltage -VCEO 60 VEmitter Base Voltage -VEBO 7 VCollector Current (DC) -IC 5 ACollector Current (PW = 10 ms) -ICP 8 ABase Current -IB 1 A OCollector Power Dissipation (a

isc Silicon PNP Power Transistor 2SB1152DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collec

isc Silicon PNP Power Transistor 2SB1153DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -170V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collec

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1157 DESCRIPTION With TO-3PFa package Complement to type 2SD1712 High fT Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT

isc Silicon PNP Power Transistor 2SB1159DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD1714Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon PNP Power Transistor 2SB1154DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage-: V = -0.5V(Max.)@ I = -6ACE(sat) CComplement to Type 2SD1705Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching application

isc Silicon PNP Power Transistor 2SB1158DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD1713Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon PNP Power Transistor 2SB1151DESCRIPTIONLarge Collector CurrentLow Collector Saturation VoltageHigh Power DissipationComplement to 2SD1691Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converter, or driver of solenoidor motor.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1156 DESCRIPTION With TO-3PFa package Complement to type 2SD1707 Low collector saturation voltage Large collector current APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITI

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1155 DESCRIPTION With TO-3PFa package Complement to type 2SD1706 Low collector saturation voltage Satisfactory linearity of hFE APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER C