2SB1151. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2SB1151 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB1151

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 20 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 90

Encapsulados: TO126

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2SB1151 datasheet

..1. Size:150K nec
2sb1151.pdf pdf_icon

..2. Size:967K utc
2sb1151.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD 2SB1151 PNP SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation *Complementary to 2SD1691 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SB1151L-x-AA3-R 2SB1151G-x-AA3-R SOT-223 E C B Tape Reel 2SB1151L-x-TA3-T 2SB1151G-x-TA3-T TO-220

..3. Size:218K jmnic
2sb1151.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB1151 DESCRIPTION With TO-126 package Complement to type 2SD1691 Low saturation voltage Large current High total power dissipation PT=1.3W Large current capability and wide SOA APPLICATIONS DC-DC converter Driver of solenoid or motor PINNING PIN DESCRIPTION 1 Emitter Collector;connected to

..4. Size:221K inchange semiconductor
2sb1151.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1151 DESCRIPTION Large Collector Current Low Collector Saturation Voltage High Power Dissipation Complement to 2SD1691 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter, or driver of solenoid or motor. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

0.1. Size:349K semtech
st2sb1151t.pdf pdf_icon

ST 2SB1151T PNP Epitaxial Silicon Power Transistor E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 60 V Emitter Base Voltage -VEBO 7 V Collector Current (DC) -IC 5 A Collector Current (PW = 10 ms) -ICP 8 A Base Current -IB 1 A O Collector Power Dissipation (a

8.1. Size:146K nec
2sb1150.pdf pdf_icon

8.2. Size:61K panasonic
2sb1154.pdf pdf_icon

Power Transistors 2SB1154 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1705 Unit mm Features 15.0 0.3 5.0 0.2 Low collector to emitter saturation voltage VCE(sat) 11.0 0.2 3.2 Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 3.2 0.1 Full-pack package which can be installed to the heat sink with one screw

8.3. Size:61K panasonic
2sb1156.pdf pdf_icon

Power Transistors 2SB1156 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1707 Unit mm Features Low collector to emitter saturation voltage VCE(sat) 15.0 0.3 5.0 0.2 11.0 0.2 3.2 Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 3.2 0.1 Full-pack package which can be installed to the heat sink with one

8.4. Size:61K panasonic
2sb1155.pdf pdf_icon

Power Transistors 2SB1155 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1706 Unit mm Features 15.0 0.3 5.0 0.2 Low collector to emitter saturation voltage VCE(sat) 11.0 0.2 3.2 Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 3.2 0.1 Full-pack package which can be installed to the heat sink with one screw

8.5. Size:165K jmnic
2sb1157.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB1157 DESCRIPTION With TO-3PFa package Complement to type 2SD1712 High fT Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-ba

8.6. Size:159K jmnic
2sb1159.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB1159 DESCRIPTION With TO-3PFa package Complement to type 2SD1714 High fT Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-ba

8.7. Size:206K jmnic
2sb1154.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB1154 DESCRIPTION With TO-3PFa package Complement to type 2SD1705 Low collector saturation voltage Satisfactory linearity of hFE APPLICATIONS For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE U

8.8. Size:162K jmnic
2sb1158.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB1158 DESCRIPTION With TO-3PFa package Complement to type 2SD1713 High fT Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-ba

8.9. Size:162K jmnic
2sb1156.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB1156 DESCRIPTION With TO-3PFa package Complement to type 2SD1707 Low collector saturation voltage Large collector current APPLICATIONS For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V

8.10. Size:197K jmnic
2sb1155.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB1155 DESCRIPTION With TO-3PFa package Complement to type 2SD1706 Low collector saturation voltage Satisfactory linearity of hFE APPLICATIONS For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE U

8.11. Size:218K inchange semiconductor
2sb1152.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1152 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collec

8.12. Size:219K inchange semiconductor
2sb1153.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1153 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -170V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collec

8.13. Size:128K inchange semiconductor
2sb1157.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1157 DESCRIPTION With TO-3PFa package Complement to type 2SD1712 High fT Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT

8.14. Size:221K inchange semiconductor
2sb1159.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1159 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD1714 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 )

8.15. Size:222K inchange semiconductor
2sb1154.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1154 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage- V = -0.5V(Max.)@ I = -6A CE(sat) C Complement to Type 2SD1705 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching application

8.16. Size:221K inchange semiconductor
2sb1158.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1158 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD1713 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 )

8.17. Size:128K inchange semiconductor
2sb1156.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1156 DESCRIPTION With TO-3PFa package Complement to type 2SD1707 Low collector saturation voltage Large collector current APPLICATIONS For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITI

8.18. Size:153K inchange semiconductor
2sb1155.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1155 DESCRIPTION With TO-3PFa package Complement to type 2SD1706 Low collector saturation voltage Satisfactory linearity of hFE APPLICATIONS For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER C

Otros transistores... 2SB1144T , 2SB1145 , 2SB1146 , 2SB1147 , 2SB1148 , 2SB1149 , 2SB115 , 2SB1150 , BC558 , 2SB1152 , 2SB1153 , 2SB1154 , 2SB1155 , 2SB1156 , 2SB1157 , 2SB1158 , 2SB1159 .