2SB1175 Todos los transistores

 

2SB1175 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB1175
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 15 W
   Tensión colector-base (Vcb): 130 V
   Tensión colector-emisor (Vce): 130 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 90
   Paquete / Cubierta: TO218

 Búsqueda de reemplazo de transistor bipolar 2SB1175

 

2SB1175 Datasheet (PDF)

 ..1. Size:95K  panasonic
2sb1175.pdf

2SB1175 2SB1175

Power Transistors2SB1175Silicon PNP epitaxial planar typeFor voltage switchingUnit: mmComplementary to 2SD17457.00.33.50.23.00.2 0 to 0.152.00.2 Features Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC I type package enabling direct soldering of the ra

 ..2. Size:1214K  kexin
2sb1175.pdf

2SB1175 2SB1175

SMD Type TransistorsPNP Transistors2SB1175TO-252Unit: mm+0.156.50-0.15+0.1 Features 2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Satisfactory linearity of forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) Large collector current IC0.127 Complementary to 2SD1745+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.15

 8.1. Size:76K  panasonic
2sb1173.pdf

2SB1175

 8.2. Size:84K  panasonic
2sb1172.pdf

2SB1175 2SB1175

Power Transistors2SB1172, 2SB1172ASilicon PNP epitaxial planar typeFor low-frequency power amplificationUnit: mmComplementary to 2SD1742, 2SD742A7.00.33.50.23.00.2 0 to 0.15 Features2.00.2 High forward current transfer ratio hFE which has satisfactory linearity Low collector-emitter saturation voltage VCE(sat) I type package enabling direct sold

 8.3. Size:94K  panasonic
2sb1176.pdf

2SB1175 2SB1175

Power Transistors2SB1176Silicon PNP epitaxial planar typeFor voltage switchingUnit: mmComplementary to 2SD17467.00.33.50.23.00.2 0 to 0.152.00.2 Features Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC I type package enabling direct soldering of the ra

 8.4. Size:94K  panasonic
2sb1174.pdf

2SB1175 2SB1175

Power Transistors2SB1174Silicon PNP epitaxial planar typeFor voltage switchingUnit: mm7.00.33.50.23.00.2 0 to 0.15 Features2.00.2 Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC I type package enabling direct soldering of the radiating fin to theprinte

 8.5. Size:52K  no
2sb1179.pdf

2SB1175

 8.6. Size:1193K  kexin
2sb1172.pdf

2SB1175 2SB1175

SMD Type TransistorsPNP Transistors2SB1172TO-252 Unit: mm Features6.50+0.15-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector-emitter saturation voltage VCE(sat)0.127 Complementary to 2SD17420.80+0.1 max-0.12.3 0.60+ 0.1 1 Base- 0.1+0.154.60 -0.152 Collec

 8.7. Size:1224K  kexin
2sb1176.pdf

2SB1175 2SB1175

SMD Type TransistorsPNP Transistors2SB1176TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.2 Features 5.30-0.2 +0.80.50 -0.7 Satisfactory linearity of forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) Large collector current IC0.127+0.10.80-0.1max Complementary to 2SD1746+ 0.11 Base2.3 0.60- 0.1+0.15

 8.8. Size:1207K  kexin
2sb1174.pdf

2SB1175 2SB1175

SMD Type TransistorsPNP Transistors2SB1174TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Satisfactory linearity of forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) Large collector current IC 0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emi

 8.9. Size:1187K  kexin
2sb1172a.pdf

2SB1175 2SB1175

SMD Type TransistorsPNP Transistors2SB1172ATO-252 Unit: mm Features6.50+0.15-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector-emitter saturation voltage VCE(sat)0.127 Complementary to 2SD1742A0.80+0.1 max-0.12.3 0.60+ 0.1 1 Base- 0.1+0.154.60 -0.152 Coll

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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