2SB1175 Todos los transistores

Power Transistors 2SB1175 Silicon PNP epitaxial planar type For voltage switching Unit mm Complementary to 2SD1745 7.0 0.3 3.5 0.2 3.0 0.2 0 to 0.15 2.0 0.2 Features Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC I type package enabling direct soldering of the ra

SMD Type Transistors PNP Transistors 2SB1175 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Satisfactory linearity of forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) Large collector current IC 0.127 Complementary to 2SD1745 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15

Power Transistors 2SB1172, 2SB1172A Silicon PNP epitaxial planar type For low-frequency power amplification Unit mm Complementary to 2SD1742, 2SD742A 7.0 0.3 3.5 0.2 3.0 0.2 0 to 0.15 Features 2.0 0.2 High forward current transfer ratio hFE which has satisfactory linearity Low collector-emitter saturation voltage VCE(sat) I type package enabling direct sold

Power Transistors 2SB1176 Silicon PNP epitaxial planar type For voltage switching Unit mm Complementary to 2SD1746 7.0 0.3 3.5 0.2 3.0 0.2 0 to 0.15 2.0 0.2 Features Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC I type package enabling direct soldering of the ra

Power Transistors 2SB1174 Silicon PNP epitaxial planar type For voltage switching Unit mm 7.0 0.3 3.5 0.2 3.0 0.2 0 to 0.15 Features 2.0 0.2 Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC I type package enabling direct soldering of the radiating fin to the printe

SMD Type Transistors PNP Transistors 2SB1172 TO-252 Unit mm Features 6.50+0.15 -0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector-emitter saturation voltage VCE(sat) 0.127 Complementary to 2SD1742 0.80+0.1 max -0.1 2.3 0.60+ 0.1 1 Base - 0.1 +0.15 4.60 -0.15 2 Collec

SMD Type Transistors PNP Transistors 2SB1176 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 Features 5.30-0.2 +0.8 0.50 -0.7 Satisfactory linearity of forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) Large collector current IC 0.127 +0.1 0.80-0.1 max Complementary to 2SD1746 + 0.1 1 Base 2.3 0.60- 0.1 +0.15

SMD Type Transistors PNP Transistors 2SB1174 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Satisfactory linearity of forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) Large collector current IC 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emi

SMD Type Transistors PNP Transistors 2SB1172A TO-252 Unit mm Features 6.50+0.15 -0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 High forward current transfer ratio hFE which has satisfactory linearity Low collector-emitter saturation voltage VCE(sat) 0.127 Complementary to 2SD1742A 0.80+0.1 max -0.1 2.3 0.60+ 0.1 1 Base - 0.1 +0.15 4.60 -0.15 2 Coll