2SB1186 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

JMnic Product Specification Silicon PNP Power Transistors 2SB1186 DESCRIPTION With TO-220Fa package Low collector saturation votlage Complement to type 2SD1763 High breakdown voltage APPLICATIONS For use in low frequency power amplifer applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CO

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB1186DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOGood Linearity of hFEComplement to Type 2SD1763Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifier applications.ABSOLUTE MAXIM

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186ATransistorsTransistors2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A(96-612-A58)(96-744-C58)277

JMnic Product Specification Silicon PNP Power Transistors 2SB1186A DESCRIPTION With TO-220Fa package Low collector saturation votlage Complement to type 2SD1763A High breakdown voltage APPLICATIONS For use in low frequency power amplifer applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER

isc Silicon PNP Power Transistor 2SB1186ADESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -160V(Min.)(BR)CEOGood Linearity of hFEComplement to Type 2SD1763AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)