2SB1186 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

JMnic Product Specification Silicon PNP Power Transistors 2SB1186 DESCRIPTION With TO-220Fa package Low collector saturation votlage Complement to type 2SD1763 High breakdown voltage APPLICATIONS For use in low frequency power amplifer applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CO

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1186 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO Good Linearity of h FE Complement to Type 2SD1763 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplifier applications. ABSOLUTE MAXIM

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A Transistors Transistors 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A (96-612-A58) (96-744-C58) 277

JMnic Product Specification Silicon PNP Power Transistors 2SB1186A DESCRIPTION With TO-220Fa package Low collector saturation votlage Complement to type 2SD1763A High breakdown voltage APPLICATIONS For use in low frequency power amplifer applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER

isc Silicon PNP Power Transistor 2SB1186A DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -160V(Min.) (BR)CEO Good Linearity of h FE Complement to Type 2SD1763A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 )