2SB1193 Todos los transistores

 ..1. Size:89K  panasonic
 2sb1193.pdf

 ..2. Size:146K  jmnic
 2sb1193.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1193 DESCRIPTION With TO-220Fa package High DC current gain High speed switching DARLINGTON Complement to type 2SD1773 APPLICATIONS For medium speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum rating

 ..3. Size:215K  inchange semiconductor
 2sb1193.pdf

isc Silicon PNP Darlington Power Transistor 2SB1193 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -120V(Min) CEO(SUS) High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -4A) FE CE C Complement to Type 2SD1773 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for midium -speed power switching applications.

 8.1. Size:1392K  rohm
 2sb1197k.pdf

2SB1197K Datasheet Low Frequency Transistor (-32V, -0.8A) lOutline l SOT-346 Parameter Value SC-59 VCEO -32V IC -800mA SMT3 lFeatures lInner circuit l l 1) Low VCE(sat). VCE(sat) -500mV ( IC= -500mA / IB= -50mA) 2) IC= -0.8A. 3) Complements the 2SD1781K. lApplication l LOW FREQUENCY POWER AMPLIFIER lPackaging specif

 8.2. Size:985K  rohm
 2sb1198k.pdf

Transistors Low-frequency Transistor (*80V, *0.5A) 2SB1198K FFeatures FExternal dimensions (Unit s mm) 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *0.5A / *50mA) 2) High breakdown voltage. BVCEO = *80V 3) Complements the 2SD1782K. FStructure Epitaxial planar type PNP silicon transistor SOT-89 FAbsolute maximum ratings (Ta = 25_C) FElectrical characteristics (Ta = 25_C)

 8.3. Size:965K  rohm
 2sb1198kfra.pdf

Transistors AEC-Q101 Qualified Low-frequency Transistor (*80V, *0.5A) 2SB1198KFRA 2SB1198K FFeatures FExternal dimensions (Unit s mm) 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *0.5A / *50mA) 2) High breakdown voltage. BVCEO = *80V 2SD1782KFRA 3) Complements the 2SD1782K. FStructure Epitaxial planar type PNP silicon transistor FAbsolute maximum ratings (Ta = 25_C) FE

 8.4. Size:179K  mcc
 2sb1197-p-q-r.pdf

MCC 2SB1197-P Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SB1197-Q CA 91311 Phone (818) 701-4933 2SB1197-R Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) Epitaxial Transistors Small Package Mounting any position Epoxy me

 8.5. Size:246K  utc
 2sb1198.pdf

UNISONIC TECHNOLOGIES CO., LTD 2SB1198 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR DESCRIPTION The UTC 2SB1198 is an epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage BVCEO= -80V * Low VCE(sat) VCE(sat)= -0.2V (Typ) (IC/IB = -0.5A/-50mA) ORDERING INFORMATION Pin Assignment Ordering Number Package Packing

 8.6. Size:693K  secos
 2sb1197.pdf

2SB1197 -0.8 A, -40 V PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-23 Low VCE(sat).VCE(sat) -0.5V(IC / IB = -0.5A /-50mA) A IC =-0.8A L 3 Complements of the 2SD1781 3 Top View C B 1 1 2 CLASSIFICATION OF hFE 2 K E Product-Rank 2SB1197-P 2SB1197-Q 2SB1197-R

 8.7. Size:620K  secos
 2sb1197k.pdf

2SB1197K -0.8 A, -40 V PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SC-59 Low VCE(sat).VCE(sat) -0.5V(IC / IB = -0.5A /-50mA) A IC =-0.8A L 3 3 Top View C B MECHANICAL DATA 1 Case SC-59, 1 2 2 K E Weight 0.008 grams(approx.) D CLASSIFICATION OF hFE H J

 8.8. Size:645K  jiangsu
 2sb1198.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SB1198 TRANSISTOR (PNP) FEATURES 1. BASE Low VCE(sat) 2. EMITTER High breakdown voltage 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -

 8.9. Size:586K  jiangsu
 2sb1197.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB1197 TRANSISTOR (PNP) SOT-23 FEATURES Unit mm 1. BASE Low VCE(sat).VCE(sat)

 8.10. Size:164K  jmnic
 2sb1192.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1192 DESCRIPTION With TO-220Fa package High VCEO Large PC Complement to type 2SD1770 APPLICATIONS Power amplifier TV vertical deflection output PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base vol

 8.11. Size:156K  jmnic
 2sb1194.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1194 DESCRIPTION With TO-220Fa package High DC current gain High speed switching DARLINGTON Complement to type 2SD1633 APPLICATIONS For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25

 8.12. Size:159K  jmnic
 2sb1190.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1190 DESCRIPTION With TO-220 package High VCEO Large PC Complement to type 2SD1772 APPLICATIONS Power amplifier TV vertical deflection output PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings

 8.13. Size:309K  htsemi
 2sb1197.pdf

2SB1 1 97 TRANSISTOR(PNP) SOT-23 1. BASE Unit mm FEATURES 2. EMITTER 3. COLLECTOR Low VCE(sat).VCE(sat)

 8.14. Size:199K  lge
 2sb1197 sot-23.pdf

2SB1197 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Low VCE(sat).VCE(sat)

 8.15. Size:252K  lge
 2sb1198k sot-23-3l.pdf

2SB1198K SOT-23-3L Transistor(PNP) 1. BASE SOT-23-3L 2. EMITTER 2.92 3. COLLECTOR 0.35 1.17 Features 2.80 1.60 Low VCE(sat) VCE(sat)=-0.2V(Typ.)(IC=-0.5A,IB=-50mA) High breakdown voltage BVCEO=-80V Complements the 2SD1782K 0.15 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collect

 8.16. Size:198K  lge
 2sb1197k sot-23-3l.pdf

2SB1197K SOT-23-3L Transistor(PNP) SOT-23-3L 1. BASE 2. EMITTER 2.92 0.35 3. COLLECTOR 1.17 Features 2.80 1.60 Power amplifier 0.15 1.90 MAXIMUM RATINGS* TA=25 unless otherwise noted Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector- Base Voltage -40 VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collec

 8.17. Size:104K  wietron
 2sb1197.pdf

2SB1197 PNP General Purpose Transistors 3 Pb Lead(Pb)-Free 1 2 Features SOT-23 * High current capacity in compact package. * Epitaxial planar type. * We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS(Ta=25 C) Rating Symbol Value Unit VCBO Collector-Base Voltage -40 V Collector-Emitter Voltage VCEO -32 V VEBO Emitter-Base Voltage -5.0

 8.18. Size:310K  willas
 2sb1197kxlt1.pdf

FM120-M WILLAS 2SB1197KxLT1 THRU Low Frequency Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to PNP Silicon

 8.19. Size:117K  lrc
 l2sb1197krlt1g.pdf

LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KQLT1G Series S-L2SB1197KQLT1G Series PNP Silicon FEATURE High current capacity in compact package. 3 IC = -0.8A. Epitaxial planar type. NPN complement L2SD1781K 1 We declare that the material of product compliance with RoHS requirements. 2 S- Prefix for Automotive and Other Applications Requiring Unique Site

 8.20. Size:113K  lrc
 l2sb1197kqlt1g.pdf

LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KQLT1G Series S-L2SB1197KQLT1G Series PNP Silicon FEATURE High current capacity in compact package. 3 IC = -0.8A. Epitaxial planar type. 1 NPN complement L2SD1781K We declare that the material of product compliance with RoHS requirements. 2 S- Prefix for Automotive and Other Applications Requiring Unique Site

 8.21. Size:166K  kexin
 2sb1197.pdf

SMD Type Transistors SMD Type PNP Transistors 2SB1197 (2SB1197K) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Low VCE(sat).VCE(sat) -0.5V IC / IB= -0.5A / -50mA . IC = -0.8A. 12 PNP silicon transistor +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCB

 8.22. Size:860K  kexin
 2sb1198k.pdf

SMD Type Transistors PNP Transistors 2SB1198K SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=-0.5A Collector Emitter Voltage VCEO=-80V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complementary to 2SD1782K +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collec

 8.23. Size:86K  chenmko
 2sb1197kgp.pdf

CHENMKO ENTERPRISE CO.,LTD 2SB1197KGP SURFACE MOUNT PNP Switching Transistor VOLTAGE 32 Volts CURRENT 0.8 Ampere APPLICATION * Telephone and proferssional communction equipment. * Other switching applications. FEATURE SOT-23 * Small surface mounting type. (SOT-23) * Corrector peak current (Max.=1000mA). * Suitable for high packing density. * Low voltage (Max.=40V) . * High satu

 8.24. Size:319K  slkor
 2sb1197k-q 2sb1197k-r.pdf

2SB1197K Plastic-Encapsulate Transistors SOT-23 (PNP) FEATURES Very low VCE(sat). VCE(sat)

 8.25. Size:939K  cn yangzhou yangjie elec
 2sb1197-p 2sb1197-q 2sb1197-r.pdf

RoHS RoHS COMPLIANT COMPLIANT 2SB1197 PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Marking 2SB1197-P AHP 2SB1197-Q AHQ 2SB1197-R AHR Maximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value

 8.26. Size:217K  inchange semiconductor
 2sb1192.pdf

 8.27. Size:218K  inchange semiconductor
 2sb1194.pdf

isc Silicon PNP Darlington Power Transistor 2SB1194 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) High DC Current Gain- h = 1500(Min)@ (V = -3V, I = -3A) FE CE C Complement to Type 2SD1633 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIM

 8.28. Size:216K  inchange semiconductor
 2sb1190.pdf