2SB1215Q
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB1215Q
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20
W
Tensión colector-base (Vcb): 120
V
Tensión colector-emisor (Vce): 100
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 3
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 130
MHz
Capacitancia de salida (Cc): 40
pF
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta:
TO218
Búsqueda de reemplazo de transistor bipolar 2SB1215Q
2SB1215Q
Datasheet (PDF)
7.2. Size:60K sanyo
2sb1215 2sd1815.pdf
Ordering number:ENN2539BPNP/NPN Epitaxial Planar Silicon Transistors2SB1215/2SD1815High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2045B[2SB1215/2SD1815]6.5Features2.35.00.54 Low collector-to-emitter saturation voltage. Exclle
7.3. Size:282K onsemi
2sb1215 2sd1815.pdf
Ordering number : EN2539C2SB1215/2SD1815Bipolar Transistorhttp://onsemi.com() () ( ) ( )100V, 3A, Low VCE sat PNP NPN Single TP/TP-FAApplications Relay drivers, high-speed inverters, converters, and other general high-current switching applicationsFeatures Low collector to emitter saturation voltage Excllent linearity of hFE Small-sized package permittin
7.4. Size:967K kexin
2sb1215.pdf
SMD Type TransistorsPNP Transistors2SB1215TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low collector-to-emitter saturation voltage. High current and high fT Fast switching time. 0.127+0.10.80-0.1max Complementary to 2SD1815+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolut
7.5. Size:253K inchange semiconductor
2sb1215.pdf
isc Silicon PNP Power Transistor 2SB1215DESCRIPTIONExcellent linearity of hFESmall and slim package making it easy to make 2SB1215/2SD1815-used set smallerLow collector-to-emitter saturation voltageFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,High speed inve
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