2SB1221 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB1221
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 250 V
Tensión colector-emisor (Vce): 200 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 0.07 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 40 MHz
Ganancia de corriente contínua (hFE): 160
Encapsulados: TO92
Búsqueda de reemplazo de 2SB1221
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2SB1221 datasheet
..1. Size:46K panasonic
2sb1221.pdf 
Transistor 2SB1221 Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SC3941 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 250 V +0.15 +0.15 0.45 0.1 0.45
..2. Size:50K panasonic
2sb1221 e.pdf
Transistor 2SB1221 Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SC3941 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 250 V +0.15 +0.15 0.45 0.1 0.45
8.8. Size:36K panasonic
2sb1220.pdf
Transistor 2SB1220 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Unit mm Complementary to 2SD1821 2.1 0.1 0.425 1.25 0.1 0.425 High collector to emitter voltage VCEO. Low noise voltage NV. S-Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute
8.9. Size:40K panasonic
2sb1220 e.pdf
Transistor 2SB1220 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Unit mm Complementary to 2SD1821 2.1 0.1 0.425 1.25 0.1 0.425 High collector to emitter voltage VCEO. Low noise voltage NV. S-Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute
8.10. Size:149K jmnic
2sb1227.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1227 DESCRIPTION With TO-220F package Complement to type 2SD1829 High DC current gain. Large current capacity and wide ASO. Low saturation voltage. DARLINGTON APPLICATIONS Suitable for use in control of motor drivers, printer hammer drivers,relay drivers,and constant-voltage regulators. PINNING
8.11. Size:148K jmnic
2sb1225.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1225 DESCRIPTION With TO-220F package Complement to type 2SD1827 High DC current gain. Large current capacity and wide ASO. Low saturation voltage. DARLINGTON APPLICATIONS Suitable for use in control of motor drivers, printer hammer drivers, relay drivers, and constant-voltage regulators. PINNIN
8.12. Size:147K jmnic
2sb1226.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1226 DESCRIPTION With TO-220F package Complement to type 2SD1828 High DC current gain. Large current capacity and wide ASO. DARLINGTON APPLICATIONS Motor drivers,printer hammer drivers,relay drivers,voltage regulator control. PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (T
8.13. Size:149K jmnic
2sb1228.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1228 DESCRIPTION With TO-220F package Complement to type 2SD1830 High DC current gain. Large current capacity and wide ASO. Low saturation voltage. DARLINGTON APPLICATIONS Suitable for use in control of motor drivers, printer hammer drivers,relay drivers,and constant-voltage regulators. PINNING
8.14. Size:164K jmnic
2sb1223.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1223 DESCRIPTION With TO-220F package Complement to type 2SD1825 High DC current gain. Large current capacity and wide ASO. DARLINGTON APPLICATIONS Suitable for use in control of motor drivers, printer hammer drivers,and constant-voltage regulators. PINNING PIN DESCRIPTION 1 Base 2 Collector F
8.15. Size:925K kexin
2sb1220.pdf
SMD Type Transistors PNP Transistors 2SB1220 Features High collector to emitter voltage VCEO. Low noise voltage NV. Complementary to 2SD1821 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -150 Collector - Emitter Voltage VCEO -150 V Emitter - Base Voltage VEBO -5 Collector Curr
8.16. Size:210K inchange semiconductor
2sb1227.pdf
isc Silicon PNP Darlington Power Transistor 2SB1227 DESCRIPTION High DC Current Gain- h = 1500(Min)@ (V = -3V, I = -2.5A) FE CE C Large Current Capability and Wide ASO. Complement to Type 2SD1829 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in control of motor drivers, printer hammer drivers, and constant
8.17. Size:208K inchange semiconductor
2sb1225.pdf
isc Silicon PNP Darlington Power Transistor 2SB1225 DESCRIPTION High DC Current Gain- h = 2000(Min)@ (V = -2V, I = -5A) FE CE C Large Current Capability and Wide ASO. Low collector-to-emitter saturation voltage Complement to Type 2SD1827 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in control of motor d
8.18. Size:212K inchange semiconductor
2sb1226.pdf
isc Silicon PNP Darlington Power Transistor 2SB1226 DESCRIPTION High DC Current Gain- h = 1500(Min)@ (V = -3V, I = -1.5A) FE CE C Large Current Capability and Wide ASO. Complement to Type 2SD1828 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in control of motor drivers, printer hammer drivers, and constant
8.19. Size:211K inchange semiconductor
2sb1228.pdf
isc Silicon PNP Darlington Power Transistor 2SB1228 DESCRIPTION High DC Current Gain- h = 1500(Min)@ (V = -3V, I = -4A) FE CE C Large Current Capability and Wide ASO. Complement to Type 2SD1830 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in control of motor drivers, printer hammer drivers, and constant-v
8.20. Size:211K inchange semiconductor
2sb1223.pdf
isc Silicon PNP Darlington Power Transistor 2SB1223 DESCRIPTION High DC Current Gain- h = 2000(Min)@ (V = -2V, I = -2A) FE CE C Large Current Capability and Wide ASO. Complement to Type 2SD1825 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in control of motor drivers, printer hammer drivers, and constant-v
Otros transistores... 2SB1216T
, 2SB1217
, 2SB1218
, 2SB1218A
, 2SB1219
, 2SB1219A
, 2SB122
, 2SB1220
, 2SA1015
, 2SB1222
, 2SB1223
, 2SB1224
, 2SB1225
, 2SB1226
, 2SB1227
, 2SB1228
, 2SB1229
.
