2SB1229S. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2SB1229S Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB1229S

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.75 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 150 MHz

Capacitancia de salida (Cc): 22 pF

Ganancia de corriente contínua (hFE): 140

Encapsulados: TO92

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2SB1229S datasheet

7.1. Size:120K sanyo
2sb1229.pdf pdf_icon

8.1. Size:128K sanyo
2sb1227.pdf pdf_icon

8.2. Size:115K sanyo
2sb1225.pdf pdf_icon

8.3. Size:123K sanyo
2sb1226.pdf pdf_icon

8.4. Size:127K sanyo
2sb1224.pdf pdf_icon

8.5. Size:126K sanyo
2sb1228.pdf pdf_icon

8.6. Size:127K sanyo
2sb1223.pdf pdf_icon

8.7. Size:36K panasonic
2sb1220.pdf pdf_icon

Transistor 2SB1220 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Unit mm Complementary to 2SD1821 2.1 0.1 0.425 1.25 0.1 0.425 High collector to emitter voltage VCEO. Low noise voltage NV. S-Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute

8.8. Size:46K panasonic
2sb1221.pdf pdf_icon

Transistor 2SB1221 Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SC3941 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 250 V +0.15 +0.15 0.45 0.1 0.45

8.9. Size:40K panasonic
2sb1220 e.pdf pdf_icon

8.10. Size:50K panasonic
2sb1221 e.pdf pdf_icon

8.11. Size:149K jmnic
2sb1227.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB1227 DESCRIPTION With TO-220F package Complement to type 2SD1829 High DC current gain. Large current capacity and wide ASO. Low saturation voltage. DARLINGTON APPLICATIONS Suitable for use in control of motor drivers, printer hammer drivers,relay drivers,and constant-voltage regulators. PINNING

8.12. Size:148K jmnic
2sb1225.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB1225 DESCRIPTION With TO-220F package Complement to type 2SD1827 High DC current gain. Large current capacity and wide ASO. Low saturation voltage. DARLINGTON APPLICATIONS Suitable for use in control of motor drivers, printer hammer drivers, relay drivers, and constant-voltage regulators. PINNIN

8.13. Size:147K jmnic
2sb1226.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB1226 DESCRIPTION With TO-220F package Complement to type 2SD1828 High DC current gain. Large current capacity and wide ASO. DARLINGTON APPLICATIONS Motor drivers,printer hammer drivers,relay drivers,voltage regulator control. PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (T

8.14. Size:149K jmnic
2sb1228.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB1228 DESCRIPTION With TO-220F package Complement to type 2SD1830 High DC current gain. Large current capacity and wide ASO. Low saturation voltage. DARLINGTON APPLICATIONS Suitable for use in control of motor drivers, printer hammer drivers,relay drivers,and constant-voltage regulators. PINNING

8.15. Size:164K jmnic
2sb1223.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB1223 DESCRIPTION With TO-220F package Complement to type 2SD1825 High DC current gain. Large current capacity and wide ASO. DARLINGTON APPLICATIONS Suitable for use in control of motor drivers, printer hammer drivers,and constant-voltage regulators. PINNING PIN DESCRIPTION 1 Base 2 Collector F

8.16. Size:925K kexin
2sb1220.pdf pdf_icon

SMD Type Transistors PNP Transistors 2SB1220 Features High collector to emitter voltage VCEO. Low noise voltage NV. Complementary to 2SD1821 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -150 Collector - Emitter Voltage VCEO -150 V Emitter - Base Voltage VEBO -5 Collector Curr

8.17. Size:210K inchange semiconductor
2sb1227.pdf pdf_icon

isc Silicon PNP Darlington Power Transistor 2SB1227 DESCRIPTION High DC Current Gain- h = 1500(Min)@ (V = -3V, I = -2.5A) FE CE C Large Current Capability and Wide ASO. Complement to Type 2SD1829 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in control of motor drivers, printer hammer drivers, and constant

8.18. Size:208K inchange semiconductor
2sb1225.pdf pdf_icon

isc Silicon PNP Darlington Power Transistor 2SB1225 DESCRIPTION High DC Current Gain- h = 2000(Min)@ (V = -2V, I = -5A) FE CE C Large Current Capability and Wide ASO. Low collector-to-emitter saturation voltage Complement to Type 2SD1827 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in control of motor d

8.19. Size:212K inchange semiconductor
2sb1226.pdf pdf_icon

isc Silicon PNP Darlington Power Transistor 2SB1226 DESCRIPTION High DC Current Gain- h = 1500(Min)@ (V = -3V, I = -1.5A) FE CE C Large Current Capability and Wide ASO. Complement to Type 2SD1828 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in control of motor drivers, printer hammer drivers, and constant

8.20. Size:211K inchange semiconductor
2sb1228.pdf pdf_icon

isc Silicon PNP Darlington Power Transistor 2SB1228 DESCRIPTION High DC Current Gain- h = 1500(Min)@ (V = -3V, I = -4A) FE CE C Large Current Capability and Wide ASO. Complement to Type 2SD1830 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in control of motor drivers, printer hammer drivers, and constant-v

8.21. Size:211K inchange semiconductor
2sb1223.pdf pdf_icon

isc Silicon PNP Darlington Power Transistor 2SB1223 DESCRIPTION High DC Current Gain- h = 2000(Min)@ (V = -2V, I = -2A) FE CE C Large Current Capability and Wide ASO. Complement to Type 2SD1825 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in control of motor drivers, printer hammer drivers, and constant-v

Otros transistores... 2SB1223 , 2SB1224 , 2SB1225 , 2SB1226 , 2SB1227 , 2SB1228 , 2SB1229 , 2SB1229R , 431 , 2SB1229T , 2SB1229U , 2SB123 , 2SB1230 , 2SB1231 , 2SB1232 , 2SB1233 , 2SB1234 .