2N1504-10 Todos los transistores

 

2N1504-10 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N1504-10

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 23 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 95 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 0.2 MHz

Ganancia de corriente contínua (hFE): 25

Encapsulados: TO10

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2N1504-10 datasheet

 9.1. Size:175K  ixys
ixtt12n150 ixth12n150.pdf pdf_icon

2N1504-10

High Voltage VDSS = 1500V IXTT12N150 ID25 = 12A Power MOSFET IXTH12N150 RDS(on) 2.2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 1500 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V VGSS Continuous 30 V TO-247 (IXTH) VG

 9.2. Size:122K  ixys
ixth12n150 ixtt12n150.pdf pdf_icon

2N1504-10

High Voltage VDSS = 1500V IXTT12N150 ID25 = 12A Power MOSFETs IXTH12N150 RDS(on) 2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 1500 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V VGSS Continuous 30 V TO-247 (IXTH) VGSM Transient

 9.3. Size:142K  ixys
ixtt12n150hv.pdf pdf_icon

2N1504-10

High Voltage VDSS = 1500V IXTT12N150HV ID25 = 12A Power MOSFET RDS(on) 2.2 N-Channel Enhancement Mode Fast Intrinsic Diode TO-268HV G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 1500 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V G = Gate D = Drain VGSS Continuous 30 V

 9.4. Size:109K  ixys
ixth2n150l.pdf pdf_icon

2N1504-10

Advance Technical Information LinearTM Power MOSFET VDSS = 1500V IXTH2N150L ID25 = 2A w/Extended FBSOA RDS(on) 15 N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated TO-247 G D (Tab) S Symbol Test Conditions Maximum Ratings G = Gate D = Drain VDSS TJ = 25 C to 150 C 1500 V S = Source Tab = Drain VDGR TJ = 25 C to 150 C

Otros transistores... 2N1499B, 2N149A, 2N150, 2N1500, 2N1500-18, 2N1501, 2N1502, 2N1504, 9014, 2N1505, 2N1506, 2N1506A, 2N1507, 2N1508, 2N1509, 2N150A, 2N1510

 

 

 

 

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