2SB1243 Todos los transistores

 ..1. Size:46K  rohm
 2sb1066m 2sb1243.pdf

 ..2. Size:141K  rohm
 2sb1243.pdf

Power Transistor ( 60V, 3A) 2SB1243 Features Dimensions (Unit mm) 1) Low VCE(sat). 2SB1243 VCE(sat) = -0.5V (Typ.) 2.5 0.2 (IC/IB = -2A / -0.2A) 6.8 0.2 2) Complements the 2SD1864. Structure 0.65Max. Epitaxial planar type PNP silicon transistor 0.5 0.1 (1) (2) (3) 2.54 2.54 1.05 0.45 0.1 (1) Emitter ROHM ATV (2) Collector (3) Base Absolute

 ..3. Size:166K  rohm
 2sb1184 2sb1243.pdf

Power Transistor (-60V, -3A) 2SB1184 / 2SB1243 Features Dimensions (Unit mm) 1) Low VCE(sat). 2SB1184 2SB1243 VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 2.5 0.2 6.8 0.2 2.3 +0.2 6.5 0.2 -0.1 C0.5 2) Complements the 2SD1760 / 2SD1864. 5.1 +0.2 -0.1 0.5 0.1 Structure 0.65Max. 0.65 0.1 0.75 Epitaxial planar type 0.9 PNP silicon transistor 0.55 0

 ..4. Size:129K  rohm
 2sb1184 2sb1243 2sb1185.pdf

Transistors Power Transistor (*60V, *3A) 2SB1184 / 2SB1243 / 2SB1185 FFeatures FExternal dimensions (Units mm) 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. FStructure Epitaxial planar type PNP silicon transistor (96-128-B57) 223 Transistors 2SB1184 / 2SB1243 / 2SB1185 FAbsolute maximum ratings (Ta = 25_C) FEle

 8.1. Size:140K  rohm
 2sb1260 2sb1181 2sb1241.pdf

Power Transistor ( 80V, 1A) 2SB1260 / 2SB1181 / 2SB1241 Features Dimensions (Unit mm) 1) Hight breakdown voltage and high current. 2SB1260 2SB1181 BVCEO= 80V, IC = 1A 2.3+0.2 6.5 0.2 2) Good hFE linearty. C0.5 5.1+0.2 3) Low VCE(sat). 0.5 0.1 4.5+0.2 1.5 Complements the 2SD1898 / 2SD1863 / 2SD1733. 1.6 0.1 0.65 0.1 0.75 (1) (2) (3) 0.9 0

 8.2. Size:173K  rohm
 2sb1188 2sb1182 2sb1240.pdf

Medium power transistor ( 32V, 2A) 2SB1188 / 2SB1182 / 2SB1240 Features Dimensions (Unit mm) 1) Low VCE(sat). 2SB1188 2SB1182 VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2.3+0.2 6.5 0.2 -0.1 4.5+0.2 -0.1 C0.5 2) Complements the 2SD1766 / 2SD1758 / 2SD1862. +0.2 5.1+0.2 1.5-0.1 -0.1 0.5 0.1 1.6 0.1 0.65 0.1 0.75 (1) (2) (3) +0.1 Structure 0.4-

 8.3. Size:80K  rohm
 2sb1241.pdf

2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor (-80V, -1A) 2SB1260 / 2SB1181 / 2SB1241 Features External dimensions (Units mm) 1) High breakdown voltage and high 2SB1260 2SB1181 current. 2.3+0.2 6.5 0.2 -0.1 C0.5 BVCEO= -80V, IC=-1A 5.1+0.2 -0.1 0.5 0.1 4.5+0.2 -0.1 2) Good hFE linearity. 1.5+0.2 1.6 0.1 -0.1 3) Low VCE(sat). 4) Complements the 2SD1898 / 0.

 8.4. Size:130K  rohm
 2sb1188 2sb1188 2sb1182 2sb1240 2sb822 2sb1277 2sb911m.pdf

Transistors Medium power Transistor(*32V,*2A) 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures FExternal dimensions (Unit mm) 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. FStructure Epitaxial planar type PNP silicon transistor (96-131-B24) 215 2SB1188

 8.5. Size:145K  rohm
 2sb1182 2sb1240.pdf

Medium power transistor ( 32V, 2A) 2SB1182 / 2SB1240 Features Dimensions (Unit mm) 1) Low VCE(sat). 2SB1182 2SB1240 VCE(sat) = 0.5V (Typ.) 2.5 0.2 6.8 0.2 (IC/IB = 2A / 0.2A) 2.3+0.2 6.5 0.2 -0.1 C0.5 2) Complements 2SD1758 / 2SD1862. 5.1+0.2 -0.1 0.5 0.1 0.65Max. 0.65 0.1 Structure 0.75 0.9 0.5 0.1 Epitaxial planar type 0.55 0.1 PN

 8.6. Size:356K  hitachi
 2sb1244 2sb1245.pdf

 8.7. Size:299K  lzg
 2sb1240 3ca1240.pdf

2SB1240(3CA1240) PNP /SILICON PNP TRANSISTOR Purpose Medium power amplifier applications. - 2SD1862(3DA1862) Features Low V ,complements the 2SD1862(3DA1862). CE(sat) /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -40