2SB1246 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Power Transistor (80V, 1A) 2SB1260 / 2SB1181 / 2SB1241 Features Dimensions (Unit : mm) 1) Hight breakdown voltage and high current. 2SB1260 2SB1181BVCEO=80V, IC = 1A 2.3+0.26.50.22) Good hFE linearty. C0.55.1+0.23) Low VCE(sat). 0.50.14.5+0.21.5Complements the 2SD1898 / 2SD1863 / 2SD1733. 1.60.10.650.1 0.75(1) (2) (3)0.90

Medium power transistor (32V, 2A) 2SB1188 / 2SB1182 / 2SB1240 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SB1188 2SB1182VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2.3+0.26.50.2-0.14.5+0.2-0.1 C0.52) Complements the 2SD1766 / 2SD1758 / 2SD1862. +0.2 5.1+0.21.5-0.1 -0.1 0.50.11.60.10.650.10.75(1) (2) (3)+0.1Structure 0.4-

2SB1260 / 2SB1181 / 2SB1241TransistorsPower Transistor (-80V, -1A)2SB1260 / 2SB1181 / 2SB1241 Features External dimensions (Units : mm)1) High breakdown voltage and high2SB1260 2SB1181current.2.3+0.26.50.2-0.1C0.5BVCEO= -80V, IC=-1A5.1+0.2-0.1 0.50.14.5+0.2-0.12) Good hFE linearity.1.5+0.21.60.1 -0.13) Low VCE(sat).4) Complements the 2SD1898 /0.

Power Transistor (60V, 3A) 2SB1243 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SB1243VCE(sat) = -0.5V (Typ.) 2.50.2(IC/IB = -2A / -0.2A) 6.80.22) Complements the 2SD1864. Structure 0.65Max.Epitaxial planar type PNP silicon transistor 0.50.1(1) (2) (3)2.54 2.541.05 0.450.1(1) EmitterROHM : ATV (2) Collector(3) BaseAbsolute

TransistorsMedium power Transistor(*32V,*2A)2SB1188 / 2SB1182 / 2SB1240 /2SB822 / 2SB1277 / 2SB911MFFeatures FExternal dimensions (Unit: mm)1) Low VCE(sat).VCE(sat) = *0.5V (Typ.)(IC / IB = *2A / *0.2A)2) Complements the 2SD1766 /2SD1758 / 2SD1862 / 2SD1189F /2SD1055 / 2SD1919 / SD1227M.FStructureEpitaxial planar typePNP silicon transistor(96-131-B24)2152SB1188

Power Transistor (-60V, -3A) 2SB1184 / 2SB1243 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SB1184 2SB1243VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 2.50.26.80.22.3 +0.26.50.2 -0.1C0.52) Complements the 2SD1760 / 2SD1864. 5.1 +0.2 -0.1 0.50.1Structure 0.65Max.0.650.10.75Epitaxial planar type 0.9PNP silicon transistor 0.550

TransistorsPower Transistor (*60V, *3A)2SB1184 / 2SB1243 / 2SB1185FFeatures FExternal dimensions (Units: mm)1) Low VCE(sat).VCE(sat) = *0.5V (Typ.)(IC / IB = *2A / *0.2A)2) Complements the 2SD1760 /2SD1864 / 2SD1762.FStructureEpitaxial planar typePNP silicon transistor(96-128-B57)223Transistors 2SB1184 / 2SB1243 / 2SB1185FAbsolute maximum ratings (Ta = 25_C)FEle

Medium power transistor (32V, 2A) 2SB1182 / 2SB1240 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SB1182 2SB1240VCE(sat) = 0.5V (Typ.) 2.50.26.80.2(IC/IB = 2A / 0.2A) 2.3+0.26.50.2-0.1C0.52) Complements 2SD1758 / 2SD1862. 5.1+0.2-0.1 0.50.10.65Max.0.650.1Structure 0.750.90.50.1Epitaxial planar type 0.550.1PN

2SB1240(3CA1240) PNP /SILICON PNP TRANSISTOR : Purpose: Medium power amplifier applications. - 2SD1862(3DA1862) Features: Low V ,complements the 2SD1862(3DA1862). CE(sat)/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -40