2SB1257 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

JMnic Product Specification Silicon PNP Power Transistors 2SB1257 DESCRIPTION With TO-220F package Complement to type 2SD2014 High DC current gain DARLINGTON APPLICATIONS Driver for solenoid ,relay and motor and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25

E(2k)(650)BDarlington 2SB1257Equivalent circuitCSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD2014)Application : Driver for Solenoid, Relay and Motor and General PurposeExternal Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Symbol Conditions Ratings 0.2Unit Unit 5.50.215.60

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1257 DESCRIPTION With TO-220F package Complement to type 2SD2014 High DC current gain DARLINGTON APPLICATIONS Driver for solenoid ,relay and motor and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maxim

Power Transistors2SB1252Silicon PNP epitaxial planar type DarlingtonFor power amplificationUnit: mm10.0 0.2 4.2 0.2Complementary to 2SD18925.5 0.2 2.7 0.2Features 3.1 0.1Optimum for 35W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):

Power Transistors2SB1253Silicon PNP epitaxial planar type DarlingtonFor power amplificationUnit: mmComplementary to 2SD189315.0 0.3 5.0 0.211.0 0.2 3.2FeaturesOptimum for 40W HiFi output 3.2 0.1High foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):

Power Transistors2SB1255Silicon PNP epitaxial planar type DarlingtonFor power amplificationUnit: mmComplementary to 2SD189515.0 0.3 5.0 0.211.0 0.2 3.2FeaturesOptimum for 90W HiFi output 3.2 0.1High foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):

Power Transistors2SB1254Silicon PNP epitaxial planar type DarlingtonFor power amplificationUnit: mmComplementary to 2SD189415.0 0.3 5.0 0.211.0 0.2 3.2FeaturesOptimum for 60W HiFi output 3.2 0.1High foward current transfer ratio hFELow collector to emitter saturation voltage VCE(sat):

JMnic Product Specification Silicon PNP Power Transistors 2SB1258 DESCRIPTION With TO-220F package Complement to type 2SD1785 High DC current gain DARLINGTON APPLICATIONS Driver for solenoid ,relay and motor and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25

JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1255 DESCRIPTION With TO-3PFa package Optimum for 90W Hi-Fi output High foward current transfer ratio hFE Low collector-emitter saturation voltage Complement to type 2SD1895 APPLICATIONS Power amplification PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(T

JMnic Product Specification Silicon PNP Power Transistors 2SB1254 DESCRIPTION With TO-3PFa package Optimum for 60W HiFi output High foward current transfer ratio Low collector saturation voltage Complement to type 2SD1894 APPLICATIONS Power amplification PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARA

E(3k)(100)BDarlington 2SB1258Equivalent circuitCSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD1785)Application : Driver for Solenoid, Relay and Motor and General PurposeExternal Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Symbol Conditions Ratings UnitUnit0.24.20.210.1c

E(3k)(100)BDarlington 2SB1259Equivalent circuitCSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD2081)Application : Driver for Solenoid, Relay and Motor and General PurposeExternal Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions Ratings Unit 0.24.20.210.1c0.

isc Silicon PNP Darlington Power Transistor 2SB1258DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@I = -3AFE CComplement to Type 2SD1785Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDriver for solenoid, relay and motor and general purposeapplications.AB

isc Silicon PNP Darlington Power Transistor 2SB1259DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@I = -5AFE CLow-Collector Saturation Voltage-: V = -1.5V(Max.)@I = -5ACE(sat) CComplement to Type 2SD2081Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio, series regulator and general purposeapplicati

INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor 2SB1253DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = -5AFE CLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -5ACE(sat) CComplement to Type 2SD1893Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for power amplifier applications

isc Silicon PNP Darlington Power Transistor 2SB1255DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = -6AFE CLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -7ACE(sat) CComplement to Type 2SD1895Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS

isc Silicon PNP Darlington Power Transistor 2SB1254DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = -6AFE CLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -6ACE(sat) CComplement to Type 2SD1894Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS