2SB126 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

/ e c d cle stage. n e a u n n i e t t n n i o a c maintenance type s planed maintenance type M i discontinued type planed discontinued typed D Maintenance/Discontinued includes following four Product lifecy http //www.semicon.panasonic.co.jp/en/ Please visit following URL about latest information. / e c d cle stage. n e a u n n i e t t n n i o

Power Transistor ( 80V, 1A) 2SB1260 / 2SB1181 / 2SB1241 Features Dimensions (Unit mm) 1) Hight breakdown voltage and high current. 2SB1260 2SB1181 BVCEO= 80V, IC = 1A 2.3+0.2 6.5 0.2 2) Good hFE linearty. C0.5 5.1+0.2 3) Low VCE(sat). 0.5 0.1 4.5+0.2 1.5 Complements the 2SD1898 / 2SD1863 / 2SD1733. 1.6 0.1 0.65 0.1 0.75 (1) (2) (3) 0.9 0

Power Transistor (-80V, -1A) 2SB1260 / 2SB1181 Features Dimensions (Unit mm) 1) Hight breakdown voltage and high current. 2SB1260 2SB1181 BVCEO= -80V, IC = -1A 2.3+0.2 6.5 0.2 2) Good hFE linearty. C0.5 5.1+0.2 0.5 0.1 3) Low VCE(sat). 4.5+0.2 1.5 4) Complements the 2SD1898 / 2SD1733. 1.6 0.1 0.65 0.1 0.75 (1) (2) (3) 0.9 0.4+0.1 0.55 0.1 0.4 0.1 0.5

2SB1260 / 2SB1181 Datasheet PNP -1.0A -80V Middle Power Transistor lOutline Collector MPT3 CPT3 Parameter Value VCEO -80V Base Collector IC -1.0A Emitter Base Emitter 2SB1260 2SB1181 lFeatures (SC-62) (SC-63) 1) Suitable for Middle Power Driver 2) Complementary NPN Types 2SD1898 / 2SD1733 3) Low VCE(sat) VCE(sat)= -0.4V Max. (IC/IB= -500mA/

UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. * BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 2SB1260G-x-A

2SB1260 -1 A, -80 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES 4 High breakdown voltage and high current BVCEO=-80V, IC=-1A 1 Good hFE linearity 2 3 B C A Complements to 2SD1898 E E C PACKAGE INFORMATION B D Weight 0.05 g (approximately) F G

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SB1261 TRANSISTOR (PNP) TO-252-2L FEATURES 1. BASE Low VCE(sat) High DC Current Gain 2. COLLECTOR 2 1 3 3. EMITTER Equivalent Circuit B1261=Device code B 1 2 6 1 Solid dot=Green moldinn compound device, XXXX if none,the normal device XXXX=Code MAXIMUM RATINGS (Ta=

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1260 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Power Transistor High Voltage and Current 3. EMITTER Low Collector-emitter saturation voltage Complements the 2SD1898 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Coll

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors TO-251-3L 2SB1261-Z TRANSISTOR (PNP) FEATURES 1. BASE High hFE Low VCE(sat) 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base V

2SB1 260 TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Power Transistor High Voltage and Current 3. EMITTER Low Collector-emitter saturation voltage Complements the 2SD1898 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V

2SB1261 Transistor(PNP) 1. BASE TO-252-2L 1 2. COLLECTOR 3. EMITTER Features High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) 0.3V Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collect

2SB1261-Z(PNP) TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) 0.3V MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current -

2SB1260 PNP Plastic-Encapsulate Transistor SOT-89 1 2 1. BASE 3 2. COLLECTOR 3. EMITTER ABSOLUTE MAXIMUM RATINGS(Ta=25%C) Rating Unit Symbol Value -80 Vdc Collector-Emitter Voltage VCEO Vdc Collector-Base Voltage -80 VCBO Emitter-Base Voltage VEBO -5.0 Vdc I Adc(DC) C 1.0 Collector Current I 2.0 Adc (Pulse) CP PC Collector Power Dissipation 0.5 W Tj , Tstg %C Jun

FM120-M WILLAS 2SB1260 THRU SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers TRANSISTOR (PNP) better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted applicati

PNP PNP Epitaxial Silicon Transistor R 2SB1261 MAIN CHARACTERISTICS I -3A C V -60V CEO P 2W C APPLICATIONS Designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES hFE=-100-400

2SB1261 Rev.E May.-2016 DATA SHEET / Descriptions TO-252 PNP Silicon PNP transistor in a TO-252 Plastic Package. / Features hFE Excellent hFE linearity, low VCE(sat), high PC. / Applications Audio f

SMD Type Transistors PNP Transistors 2SB1260 1.70 0.1 Features Hight breakdown voltage and high current. Low collector-emitter saturation voltage VCE(sat) Good hFE linearty. 0.42 0.1 0.46 0.1 Complementary to 2SD1898 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Colle

SMD Type Transistors PNP Transistors 2SB1266 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Suitable for sets whose height is restricted Complementary to 2SD1902 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Un

SMD Type Transistors Power Transistor 2SB1260 Features High breakdown voltage and high current.BVCEO=-80V, IC=-1A Good hFE linearity. Low VCE(sat). Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -5 V Collector current IC -1 A

SMD Type Transistors PNP Transistors 2SB1261-Z TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features High hFE hFE = 100 to 400 Low VCE(sat) VCE(sat) 0.3 V 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Coll

SMD Type Transistors Power Transistor 2SB1260 Features High breakdown voltage and high current.BVCEO=-80V, IC=-1A Good hFE linearity. Low VCE(sat). Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -5 V Collector current IC -1 A

SMD Type Transistors Power Transistor 2SB1260 Features High breakdown voltage and high current.BVCEO=-80V, IC=-1A Good hFE linearity. Low VCE(sat). Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -5 V Collector current IC -1 A

2SB1261 Silicon PNP Power Transistors DESCRIPTION Low Collector Saturation Voltage High Power Dissipation- P = 10W(Max)@T =25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio amplifier and switching, especially in hybrid integrated circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

Plastic-Encapsulate Transistors FEATURES 2SB1260(PNP) High breakdown voltage and high current. BVCEO=-80V,IC=-1A Good hFEVLinearity. Low VCE(sat). Complements the 2SD1898. Marking ZL Maximum Ratings (Ta=25 unless otherwise noted) 1. BASE Parameter Symbol Value Unit 2. COLLECTO SOT-89 Collector-Base Voltage VCBO -80 V 3. EMITTER Collector-Emitter Voltage VCEO -80 V

isc Silicon NPN Power Transistors 2SB1261-K DESCRIPTION Low Collector Saturation Voltage High Power Dissipation- P = 10W(Max)@T =25 C C Complement to Type 2SD1899-K Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio amplifier and switching, especially in hybrid integrated circuits. ABSOLUTE MAXIMUM