2SB127 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SB127
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 32 V
   Tensión colector-emisor (Vce): 16 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 3.5 A
   Temperatura operativa máxima (Tj): 85 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 0.06 MHz
   Ganancia de corriente contínua (hfe): 25
   Paquete / Cubierta: TO3

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2SB127 Datasheet (PDF)

0.1. Size:395K 1
2sb821 2sb1276.pdf pdf_icon

0.2. Size:121K sanyo
2sb1270.pdf pdf_icon

0.3. Size:34K sanyo
2sb1274 2sd1913.pdf pdf_icon

Ordering number : ENN2246B2SB1274/2SD1913PNP/NPN Epitaxial Planar Silicon Transistors2SB1274/2SD191360V/3A Low-FrequencyPower Amplifier ApplicationsApplicationsPackage Dimensions General power amplifier.unit : mm2041A[2SB1274/2SD1913]4.510.02.8Features3.2 Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High br

0.4. Size:125K sanyo
2sb1271.pdf pdf_icon

0.5. Size:169K rohm
2sb1275 2sb1275 2sb1236a.pdf pdf_icon

Power Transistor (160V, 1.5A) 2SB1275 / 2SB1236A Features Dimensions (Unit : mm) 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. 2SB12755.5 1.5 (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 0.94) Complements the 2SD1918 / 2SD1857A. C0.50.8Min.1.52.59.5(1) Base(Gate)Absolute maximum ratings (Ta =

0.6. Size:130K rohm
2sb1188 2sb1188 2sb1182 2sb1240 2sb822 2sb1277 2sb911m.pdf pdf_icon

TransistorsMedium power Transistor(*32V,*2A)2SB1188 / 2SB1182 / 2SB1240 /2SB822 / 2SB1277 / 2SB911MFFeatures FExternal dimensions (Unit: mm)1) Low VCE(sat).VCE(sat) = *0.5V (Typ.)(IC / IB = *2A / *0.2A)2) Complements the 2SD1766 /2SD1758 / 2SD1862 / 2SD1189F /2SD1055 / 2SD1919 / SD1227M.FStructureEpitaxial planar typePNP silicon transistor(96-131-B24)2152SB1188

0.7. Size:48K rohm
2sb1275 2sb1236a 2sb1569a 2sb1186a 2sd2211 2sd1918 2sd1857a 2sd2400a 2sd1763a.pdf pdf_icon

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186ATransistorsTransistors2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A(96-612-A58)(96-744-C58)277

0.8. Size:114K rohm
2sb851 2sb1278.pdf pdf_icon

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

0.9. Size:361K jiangsu
2sb1274.pdf pdf_icon

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors2SB1274 TRANSISTOR (PNP)TO-220-3LFEATURES 1. BASE Wide ASO (Adoption of MBIT Process).2. COLLECTOR Low Saturation Voltage.3. EMITTER High Reliability. High Breakdown Voltage. Equivalent Circuit B1274=Device code Solid dot=Green moldinn compound device, if none,th

0.10. Size:302K lge
2sb1274.pdf pdf_icon

2SB1274(PNP) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown voltage. MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector- Base Voltage -60 V VCEO Collector-E

0.11. Size:1584K kexin
2sb1275.pdf pdf_icon

SMD Type TransistorsPNP Transistors2SB1275TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.8 Features0.50 -0.7 High voltage :VCEO= -160V Suitable for Middle Power Driver Complementary to 2SD19180.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Pa

0.12. Size:241K lzg
2sb1274 3ca1274.pdf pdf_icon

2SB1274(3CA1274) PNP /SILICON PNP TRANSISTOR Purpose: Low frequency power amplifier applications. Features: High V ,low saturation voltage, wide ASO. CEO/Absolute maximum ratings(Ta=25) Symbol Rating Unit VCBO

0.13. Size:202K inchange semiconductor
2sb1273.pdf pdf_icon

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB1273DESCRIPTIONHigh ReliabilityLow Collector Saturation Voltage: V = -1.0V(Max)@I = -2ACE(sat) CWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25

0.14. Size:213K inchange semiconductor
2sb1275.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1275DESCRIPTIONSuitable for middle power driversHigh voltage:V =-160VCEOComplementary NPN types:2SD1918100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor drivers,LED driver,Power supplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Col

0.15. Size:154K inchange semiconductor
2sb1274.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1274 DESCRIPTION With TO-220F package Complement to type 2SD1913 High reliability. High breakdown voltage Low saturation voltage. Wide area of safe operation APPLICATIONS 60V/3A low-frequency power amplifier General power amplifier applications PINNING PIN DESCRIPTION1 Emitt

0.16. Size:207K inchange semiconductor
2sb1272.pdf pdf_icon

isc Silicon PNP Darlington Power Transistor 2SB1272DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h =1000(Min)@ (V = -2V, I = -1A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RATINGS(T =25

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