2SB1274S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SB1274S
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 60 pF
   Ganancia de corriente contínua (hfe): 140
   Paquete / Cubierta: TO220

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2SB1274S Datasheet (PDF)

7.1. Size:34K sanyo
2sb1274 2sd1913.pdf

Ordering number : ENN2246B2SB1274/2SD1913PNP/NPN Epitaxial Planar Silicon Transistors2SB1274/2SD191360V/3A Low-FrequencyPower Amplifier ApplicationsApplicationsPackage Dimensions General power amplifier.unit : mm2041A[2SB1274/2SD1913]4.510.02.8Features3.2 Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High br

7.2. Size:361K jiangsu
2sb1274.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors2SB1274 TRANSISTOR (PNP)TO-220-3LFEATURES 1. BASE Wide ASO (Adoption of MBIT Process).2. COLLECTOR Low Saturation Voltage.3. EMITTER High Reliability. High Breakdown Voltage. Equivalent Circuit B1274=Device code Solid dot=Green moldinn compound device, if none,th

7.3. Size:302K lge
2sb1274.pdf

2SB1274(PNP) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown voltage. MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector- Base Voltage -60 V VCEO Collector-E

7.4. Size:241K lzg
2sb1274 3ca1274.pdf

2SB1274(3CA1274) PNP /SILICON PNP TRANSISTOR Purpose: Low frequency power amplifier applications. Features: High V ,low saturation voltage, wide ASO. CEO/Absolute maximum ratings(Ta=25) Symbol Rating Unit VCBO

7.5. Size:154K inchange semiconductor
2sb1274.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1274 DESCRIPTION With TO-220F package Complement to type 2SD1913 High reliability. High breakdown voltage Low saturation voltage. Wide area of safe operation APPLICATIONS 60V/3A low-frequency power amplifier General power amplifier applications PINNING PIN DESCRIPTION1 Emitt

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

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