2SB1291 Todos los transistores

 ..1. Size:216K  inchange semiconductor
 2sb1291.pdf

isc Silicon PNP Power Transistor 2SB1291 DESCRIPTION High Collector Current I = -5A C Low Collector Saturation Voltage V = -1.5V(Max)@I = -3A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1720 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE

 8.1. Size:122K  sanyo
 2sb1296.pdf

 8.2. Size:114K  sanyo
 2sb1295.pdf

 8.3. Size:39K  rohm
 2sb1292.pdf

2SB1292 Transistors Transistors 2SB1832 (94L-316-B75) (94L-872-D75) 286

 8.4. Size:38K  rohm
 2sb1290.pdf

2SB1290 Transistors Transistors 2SD1833 (96-630-B55) (96-741-D55) 285

 8.5. Size:57K  rohm
 2sb1290 1-2.pdf

 8.6. Size:154K  rohm
 2sb1294.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.7. Size:58K  rohm
 2sb1292 1-2.pdf

 8.8. Size:41K  panasonic
 2sb1297 e.pdf

Transistor 2SB1297 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SD1937 5.0 0.2 4.0 0.2 Features Extremely satisfactory linearity of the forward current transfer ratio hFE. High transition frequency fT. Makes up a complementary pair with 2SD1937, which is opti- 0.7 0.1 mum for the pre-driver stage of a 40 to 60W output amp

 8.9. Size:37K  panasonic
 2sb1297.pdf

Transistor 2SB1297 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SD1937 5.0 0.2 4.0 0.2 Features Extremely satisfactory linearity of the forward current transfer ratio hFE. High transition frequency fT. Makes up a complementary pair with 2SD1937, which is opti- 0.7 0.1 mum for the pre-driver stage of a 40 to 60W output amp

 8.10. Size:53K  panasonic
 2sb1299.pdf

Power Transistors 2SB1299 Silicon PNP epitaxial planar type For power amplification Unit mm Complementary to 2SD1273 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High foward current transfer ratio hFE 3.1 0.1 Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 Absolute

 8.11. Size:1395K  kexin
 2sb1295.pdf

SMD Type Transistors PNP Transistors 2SB1295 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Large current capacity. Low collector to emitter saturation voltage. 1 2 Complimentary to 2SD1935. +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - B

 8.12. Size:217K  inchange semiconductor
 2sb1293.pdf

isc Silicon PNP Power Transistor 2SB1293 DESCRIPTION High Collector Current I = -5A C Low Collector Saturation Voltage V = -1.0V(Max)@I = -3A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1896 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE

 8.13. Size:217K  inchange semiconductor
 2sb1292.pdf

isc Silicon PNP Power Transistor 2SB1292 DESCRIPTION High Collector Current I = -5A C Low Collector Saturation Voltage V = -1.5V(Max)@I = -3A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1832 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE

 8.14. Size:219K  inchange semiconductor
 2sb1290.pdf

isc Silicon PNP Power Transistor 2SB1290 DESCRIPTION High Collector Current I = -7A C Low Collector Saturation Voltage V = -1.0V(Max)@I = -4A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1833 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE

 8.15. Size:218K  inchange semiconductor
 2sb1294.pdf

isc Silicon PNP Power Transistor 2SB1294 DESCRIPTION High Collector Current I = -5A C Low Collector Saturation Voltage V = -1.0V(Max)@I = -3A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1897 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE